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Datasheet: M12JZ47 (Toshiba Semiconductor)

Ac Power Control Applications

 

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Toshiba Semiconductor
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
1
TOSHIBA
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS


l Repetitive Peak off-State Voltage : V
DRM
= 400, 600V
l R.M.S On-State Current
: I
T (RMS)
= 12A
l High Commutating (dv / dt)
l Isolation Voltage
: V
Isol
= 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
SM12GZ47
SM12GZ47A
400
Repetitive Peak
Off-State Voltage and
Repetitive Peak
Reverse Voltage
SM12JZ47
SM12JZ47A
V
DRM
600
V
R. M. S. On-tate Current
(Full Sine Waveform TC = 72C)
I
T (RMS)
12 A
120 (50Hz)
Peak One Cylce Surge On-State
Current (Non-Repetitive)
I
TSM
132 (60Hz)
A
I
2
t Limit Value
I
2
t 72
A
2
s
Critical Rate of Rise of On-State
Current (Note
1)
di / dt
50
A / s
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Gate Voltage
V
FGM
10 V
Peak Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Isolation Voltage (AC, t = 1min.)
V
Isol
1500 V
Unit: mm
JEDEC
JEITA
TOSHIBA 13-10H1A
Weight: 1.7g
Note 1: di / dt test condition
V
DRM
= 0.5 Rated
I
TM
17A
t
gw
10s
t
gr
250ns
i
gp
= I
GT
2.0
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current
I
DRM
V
DRM
= Rated
20 A
I
T2 (+) , Gate (+)
1.5
II
T2 (+) , Gate (-)
1.5
III T2
(-) , Gate (-)
1.5
Gate Trigger Voltage
IV
V
GT
V
D
= 12V,
R
L
= 20
T2 (-) , Gate (+)
V
I
T2 (+) , Gate (+)
30
II
T2 (+) , Gate (-)
30
III T2
(-) , Gate (-)
30
SM12GZ47
SM12JZ47
IV T2
(-) , Gate (+)
I
T2 (+) , Gate (+)
20
II
T2 (+) , Gate (-)
20
III T2
(-) , Gate (-)
20
Gate Trigger
Current
SM12GZ47A
SM12JZ47A
IV
I
GT
V
D
= 12V,
R
L
= 20
T2 (-) , Gate (+)
mA
Peak On-State Voltage
V
TM
I
TM
= 17A
1.5 V
Gate Non-Trigger Voltage
V
GD
V
D
= Rated, Tc = 125C
0.2
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
50 mA
Thermal Resistance
R
th (j-c)
Junction to Case, AC
3.0
C
/
W
SM12GZ47
SM12JZ47
300
Critical Rate of
Rise of Off-State
Voltage
SM12GZ47A
SM12JZ47A
dv / dt
V
DRM
= Rated, T
j
= 125C
Exponential Rise
200
V / s
SM12GZ47
SM12JZ47
10
Critical Rate of
Rise of Off-State
Voltage at
Commutation
SM12GZ47A
SM12JZ47A
(dv / dt) c
V
DRM
= 400V, T
j
= 125C
(di / dt) c = - 6.5A / ms
4
V / s
MARKING
*NUMBER SYMBOL
MARK
*1 TOSHIBA
PRODUCT
MARK
SM12GZ47, SM12GZ47A
M12GZ47
*2
SM12JZ47, SM12JZ47A
M12JZ47
*3
TYPE
SM12GZ47A, SM12JZ47A
A
*4
Example
8A: January 1998
8B: February 1998
8L: December 1998
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
3
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
4
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
5

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000707EAA
RESTRICTIONS ON PRODUCT USE
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