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Datasheet: J680 (Toshiba Semiconductor)

Field Effect Transistor Silicon P-Channel MOS Type (Ґр-MOS V)

 

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Toshiba Semiconductor
2SJ680
2004-12-24
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications


Low drain-source ON-resistance: R
DS (ON)
= 1.6
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
= -100
A (max) (V
DS
= -200 V)
Enhancement model: V
th
= -1.5 ~ -3.5 V (V
DS
= -10 V, I
D
= -1 mA)

Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Drain-source voltage
V
DSS
-200 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
-200 V
Gate-source voltage
V
GSS
20 V
DC (Note
1) I
D
-2.5
Drain current
Pulse (Note
1)
I
DP
-10
A
Drain power dissipation (Tc
= 25C)
P
D
20 W
Single pulse avalanche energy
(Note
2)
E
AS
97.5 mJ
Avalanche current
I
AR
-2.5 A
Repetitive avalanche energy (Note 3)
E
AR
2.0
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C

Thermal Characteristics
Characteristic Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
C/W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: V
DD
= -50 V, Tch = 25C (initial), L = -25.2 mH, I
AR
= -2.5 A R
G
= 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm









JEDEC
JEITA
TOSHIBA 2-7J2B
Weight: 0.36 g (typ.)
MAX
1 MAX
MAX
MAX
2SJ680
2004-12-24
2
Electrical Characteristics
(Ta
=
25C)
Characteristic Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Drain cutoff current
I
DSS
V
DS
= -200 V, V
GS
= 0 V
-100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-200
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -1 mA
-1.5
-3.5 V
Drain-source ON-resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -1.5 A
1.6 2.0
Forward transfer admittance
Y
fs
V
DS
= -10 V, I
D
= -1.5 A
1.0
2.0
S
Input capacitance
C
iss
410
Reverse transfer capacitance
C
rss
40
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
145
pF
Rise time
t
r
20
Turn-on time
t
on
45
Fall time
t
f
15
Switching time
Turn-off time
t
off
85
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
10
Gate-source charge
Q
gs
6
Gate-drain ("Miller") charge
Q
gd
V
DD

- -160 V, V
GS
= -10 V,
I
D
= -2.5 A
4
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
-2.5 A
Pulse drain reverse current
(Note 1)
I
DRP
-10 A
Forward voltage (diode)
V
DSF
I
DR
= -2.5 A, V
GS
= 0 V
2.0
V
Reverse recovery time
t
rr
135 ns
Reverse recovery charge
Q
rr
I
DR
= -2.5 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/s
0.81
C
Marking
Duty <= 1%, t
w
= 10 s
-10 V
0
V
V
GS
R
L
= 66.7
V
DD

- -100 V
I
D
= -1.5 A V
OUT
50

J680
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2SJ680
2004-12-24
3

























































F
o
r
w
ar
d t
r
a
n
sfe
r

ad
mittan
c
e


Y
fs

(S)
Drai
n
-
s
o
urc
e

v
o
l
t
a
ge V
DS
(V)
Drain-source voltage VDS
(V)
I
D
V
DS
D
r
ain
cu
rre
nt

I D
(A)
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ain
cu
rre
nt

I D
(A)
Gate-source voltage VGS (V)
I
D
V
GS
D
r
ain
cu
rre
nt

I D
(A)
Gate-source voltage VGS (V)
V
DS
V
GS
Drain current ID (A)
Y
fs
I
D
Drain current ID (A)
R
DS (ON)
I
D
D
r
ain
-
so
urc
e
O
N
-r
esis
t
a
n
c
e
R
DS
(
O
N)
(
)
0
0
-1
-2
-3
-4
-5
-0.4
-0.8
-1.2
-1.6
-2.0
Common source
Tc
= 25C
pulse test
VGS = -4 V
-4.2
-4.4
-4.6
-4.8
-5
-6
-8
-10
-15
0
0
-10
-20
-30
-40
-50
-1
-2
-3
-4
-5
Common source
Tc
= 25C, pulse test
VGS = -4 V
-4.2
-4.4
-4.6
-4.8
-5
-5.25
-5.5
-5.75
-6
-10
-15
-8
0
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
Common source
VDS = -10 V
pulse test
Tc
= -55C
25
100
0
0
-4
-8
-12
-16
-20
-2
-4
-6
-8
-10
Common source
Tc
= 25C
pulse test
ID = -2.5 A
-1.5
-0.8
0.1
-0.1
-1
-10
1
10
Tc
= -55C
Common source
VDS = -10 V
pulse test
25
100
0.1
-0.1
-1
-10
1
10
VGS = -10 V
Common source
Tc
= 25C
pulse test
-15
2SJ680
2004-12-24
4

























































Drain
po
w
e
r
diss
i
p
a
t
ion


P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge

V
th
(
V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ain
-
so
urc
e
O
N
-r
esis
t
a
n
c
e
R
DS
(
O
N)
(
)
Drain-source voltage VDS (V)
I
DR
V
DS
Drain
re
v
e
r
s
e c
u
r
r
e
n
t

I DR
(
A
)
Drain-source voltage VDS (V)
Capacitance V
DS
C
apacit
anc
e
C
(p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
G
a
t
e
-
s
ou
rc
e vo
l
t
a
g
e

V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Dr
ai
n-
s
o
u
r
ce

vo
lt
ag
e
V
DS
(V
)
0
-80
-40 0 40 80 120 160
1
2
3
4
5
6
Common source
VGS = -10 V
pulse test
ID = -1.5 A
-1.2
-1.0
-0.1
0
-1
-10
0.2 0.4 0.6 0.8 1
Common source
Tc
= 25C
pulse test
VGS = 0 V
-1
-3
-5
1
-0.1
-1
-10
-100
10
100
1000
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
0
-80
-40 0 40 80 120 160
1
2
3
4
5
Common source
VDS = 10 V
ID = 1 mA
pulse test
0
0 40 80 120
160
10
20
30
40
-4
0
0 4 8 12
16 20
-8
-12
-16
-40
-80
-120
-160
Common source
ID = -2.5 A
Tc
= 25C
pulse test
VDS = -40 V
-80
-180
VGS
VDS
2SJ680
2004-12-24
5

























































Pulse width tw (S)
r
th
t
w
N
o
r
m
aliz
ed
t
r
a
n
s
i
e
n
t t
h
e
r
m
a
l i
m
pe
da
nc
e
r th
(t)
/R
th (c
h-c
)
Drain-source voltage VDS (V)
Safe operating area
D
r
a
i
n c
u
r
r
en
t


I D
(A
)
0.001
10
100
1 m
10 m
100 m
1
10
100
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
T
PDM
t
Duty
= t/T
Rth (ch-c) = 6.25C/W
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
ID max (pulse) *
DC
operation
100
s*
1 ms*
VDSS max
-0.005
-0.1
-0.3
-1
-3
-10
-30
-100 -300
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
-30
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
A
v
al
an
c
h
e
en
er
gy

E
AS
(mJ
)
Channel temperature Tch (C)
E
AS
T
ch
0
25
20
40
60
100
80
50
75
100 125 150
-15 V
15
V
Test circuit
Waveform
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25
V
DD
= -50 V, L = 25.2 mH


-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
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