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Datasheet: 0785_XP161A1355PR (Torex Semiconductor)

POWER MOSFET

 

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Torex Semiconductor
Power MOS FET
846
11
General Description
Features
Applications
Pin Configuration
Pin Assignment
Equivalent Circuit
Absolute Maximum Ratings
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.05
( Vgs = 4.5V )
: Rds (on) = 0.07
( Vgs = 2.5V )
: Rds (on) = 0.15
( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage
: 1.5V
High density mounting : SOT-89
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.05 (max)
NUltra High-Speed Switching
NSOT-89 Package
NGate Protect Diode Built-in
1
S
D
G
SOT-89
TOP VIEW
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
1
N-Channel MOS FET
( 1 device built-in )
Ta=25
O
C
SYMBOL
RATINGS
UNITS
Vdss
20
V
Vgss
8
V
Id
4
A
Idp
16
A
Idr
4
A
Pd
2
W
Tch
150
O
C
Tstg
- 55 ~ 150
O
C
( note ) : When implemented on a ceramic PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PARAMETER
11S_40XP161A1355PR 02.9.12 4:15 PM 846
XP161A1355PR
847
11
Electrical Characteristics
DC Characteristics
Ta=25
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Drain Cut-off Current
Idss
Vds = 20V , Vgs = 0V
10
A
Gate-Source Leakage Current
Igss
Vgs =
8V , Vds = 0V
10
A
Gate-Source Cut-off Voltage
Vgs (off )
Id = 1mA , Vds = 10V
0.5
1.2
V
Drain-Source On-state Resistance
Rds ( on )
Id = 2A , Vgs = 4.5V
0.37
0.05
Id = 2A , Vgs = 2.5V
0.05
0.07
( note )
Id = 0.5A , Vgs = 1.5V
0.10.1
5
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic Characteristics
Ta=25
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Capacitance
Ciss
390
pF
Output Capacitance
Coss
Vds = 10V , Vgs = 0V
210
pF
Feedback Capacitance
Crss
f = 1 MHz
90
pF
Switching Characteristics
Ta=25
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Turn-on Delay Time
td ( on )
10
ns
Rise Time
tr
Vgs = 5V , Id = 2A
15
ns
Turn-off Delay Time
td ( off )
Vdd = 10V
85
ns
Fall Time
tf
45
ns
Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
Implement on a ceramic PCB
( channel-ambience )
Id = 2A , Vds = 10V
| Yfs |
S
10
C / W
62.5
Rth ( ch-a )
Vf
If = 4A , Vgs = 0V
V
0.85
1.1
11S_40XP161A1355PR 02.9.12 4:15 PM 847
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Typical Performance Characteristics
0
2
4
6
8
10
12
14
16
0
0.5
1
1.5
2
2.5
3
125
25
0
0.03
0.06
0.09
0.12
0.15
0
2
4
6
8
Ta=25, Pulse Test
Id=4A
2A
0.01
0.1
1
0
5
10
15
20
Vgs=1.5V
0
2
4
6
8
10
12
14
16
0
0.5
1
1.5
2
2.5
3
Ta=25, Pulse Test
Vgs=1V
1.5V
2.5V
3V
4V
5V, 4.5V
3.5V
2V
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
Vds=10V, Pulse Test
Ta=-55
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Ta=25, Pulse Test
2.5V
4.5V
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain-Source On-State Resistance:Rds(on) ()
Drain-Source On-State Resistance:Rds(on) ()
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Drain Current:Id (A)
Drain Current:Id (A)
0
0.03
0.06
0.09
0.12
0.15
-50
0
50
100
150
Pulse Test
Ambient Temp.:Topr ()
Vgs=1.5V
4.5V
Id=2A
0.5A
2.5V
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
-50
0
50
100
150
Vds=10V, Id=1mA
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Ambient Temp.:Topr ()
Drain-Source On-State Resistance
:Rds(on) ()
Gate-Source Cut-Off Voltage Variance
:Vgs(off) Variance (V)
2A, 4A
2A, 4A
11S_40XP161A1355PR 02.9.12 4:15 PM 848
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11
10
100
1000
10000
0
5
10
15
20
Coss
Ciss
Crss
1
10
100
1000
0
2
4
6
8
10
tr
td(on)
td(off)
tf
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
SWITCHING TIME vs. DRAIN CURRENT
Vgs=5V, Vdd10V, PW=10s, duty
1%, Ta=25
Vgs=0V, f=1MHz, Ta=25
Switching Time:t (ns)
Capacitance:C (pF)
0
1
2
3
4
5
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
1.5V
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Pulse Width:PW (s)
Standardized Transition Thermal Resistance:s(t)
Single Pulse
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
Rth(ch-a)=62.5/W, Implemented on a ceramic PCB
Ta=25, Pulse Test
Vds=10V, Id=4A, Ta=25
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Vgs=0V, -4.5V
4.5V
2.5V
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Gate-Source Voltage:Vgs (V)
Reverse Drain Current:Idr (A)
11S_40XP161A1355PR 02.9.12 4:15 PM 849
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