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Datasheet: LM285EOA-2.5 (TelCom Semiconductor, Inc)

LOW POWER, BANDGAP VOLTAGE REFERENCES

 

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TelCom Semiconductor, Inc

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3-9
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
LOW POWER, BANDGAP VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
Temperature
Part No.
Package
Range
Voltage
Tolerance
LM285BEOA-1.2
8-Pin SOIC
40
C to +85
C
1.2
1%
LM285BEOA-2.5
8-Pin SOIC
40
C to +85
C
2.5
1.5%
LM285BEZB-1.2
TO-92-3
40
C to +85
C
1.2
1%
LM285BEZB-2.5
TO-92-3
40
C to +85
C
2.5
1.5%
LM285EOA-1.2
8-Pin SOIC
40
C to +85
C
1.2
2%
LM285EOA-2.5
8-Pin SOIC
40
C to +85
C
2.5
3%
LM285EZB-1.2
TO-92-3
40
C to +85
C
1.2
2%
LM285EZB-2.5
TO-92-3
40
C to +85
C
2.5
3%
LM385BCOA-1.2
8-Pin SOIC
0
C to +70
C
1.2
1%
LM385BCOA-2.5
8-Pin SOIC
0
C to +70
C
2.5
1.5%
LM385BCZB-1.2
TO-92-3
0
C to +70
C
1.2
1%
LM385BCZB-2.5
TO-92-3
0
C to +70
C
2.5
1.5%
LM385COA-1.2
8-Pin SOIC
0
C to +70
C
1.2
2%
LM385COA-2.5
8-Pin SOIC
0
C to +70
C
2.5
3%
LM385CZB-1.2
TO-92-3
0
C to +70
C
1.2
2%
LM385CZB-2.5
TO-92-3
0
C to +70
C
2.5
3%
PIN CONFIGURATIONS
GENERAL DESCRIPTION
The LM285/385-1.2V (1.235V output) and LM285/385-
2.5V (2.5V output) are bipolar, two-terminal, bandgap volt-
age references that offer precision performance without
premium price. These devices do not require thin-film re-
sistors, greatly lowering manufacturing complexity and cost.
A 30ppm/
C output temperature coefficient and a 15
A
to 20mA operating current range make these voltage refer-
ences especially attractive for multimeter, data acquisition
and telecommunications applications.
FEATURES
s
Output Tolerance ....................................... 1% or 2%
s
Output Voltage Option
LM285/385-1.2V ........................................ 1.235V
LM285/385-2.5V ............................................ 2.5V
s
Wide Operating Current Range
LM285/385-1.2V ........................... 15
A to 20mA
LM285/385-2.5V ........................... 20
A to 20mA
s
Temperature Coefficient .......................... 30ppm/
C
s
Dynamic Impedance .......................................... 0.6
s
TO-92-3 Plastic Package
s
8-Pin Plastic Narrow Body (SOIC) Package
APPLICATIONS
s
ADC and DAC Reference
s
Current Source Generation
s
Threshold Detectors
s
Power Supplies
s
Multi-meters
NC = NO INTERNAL CONNECTION
1
2
3
4
8
7
6
5
CATHODE
NC
NC
NC
NC
NC
NC
ANODE
1
TO-92-3 PLASTIC
(BOTTOM VIEW)
SURFACE MOUNT
8-PIN PLASTIC SOIC
3
LM285/285B EZB-1.2
LM285/285B EZB-2.5
LM385/385B CZB-1.2
LM385/385B CZB-2.5
LM285/285B E0A-1.2
LM285/285B EOA-2.5
LM385/385B COA-1.2
LM385/385B COA-2.5
2
LM285/B/385/B-9 11/6/96
ORDERING INFORMATION
3-10
TELCOM SEMICONDUCTOR, INC.
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
ABSOLUTE MAXIMUM RATINGS*
Forward Current .................................................... +10mA
Reverse Current .................................................... +30mA
Storage Temperature Range ................ 65
C to +150
C
Operating Temperature Range
TO-92 Package ................................ 40
C to +85
C
Surface Mount Package ................... 40
C to +85
C
Lead Temperature (Soldering, 10 sec)
TO-92 Package .............................................. +300
C
Surface Mount Package ................................. +300
C
Power Dissipation
Limited by Forward/Reverse Current
*Functional operation above the absolute maximum stress ratings is not
implied.
ELECTRICAL CHARACTERISTICS:
T
A
= +25
C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Typ
Max
Unit
V
(BR)R
Reverse Breakdown Voltage
I
R
20mA
V
LM285B-1.2/LM385B-1.2
1.223
1.235
1.247
1.223
1.235
1.247
T
A
= T
low
to T
high
(Note 1)
1.200
--
1.270
1.210
--
1.260
LM285-1.2V/LM385-1.2V
1.205
1.235
1.260
1.205
1.235
1.260
T
A
= T
low
to T
high
(Note 1)
1.192
--
1.273
1.192
--
1.273
I
RMIN
Minimum Operating Current
A
T
A
= +25
C
--
8.0
15
--
8.0
15
T
A
= T
low
to T
high
(Note 1)
--
--
20
--
--
20
V
(BR)R
Reverse Breakdown Voltage
mV
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25
C
--
--
1.0
--
--
1.0
T
A
= T
low
to T
high
(Note 1)
--
--
1.5
--
--
1.5
1.0mA = I
R
= 20mA, T
A
= +25
C
--
--
10
--
--
20
T
A
= T
low
to T
high
(Note 1)
--
--
20
--
--
25
Z
Reverse Dynamic Impedance
I
R
= 100
A
--
0.6
--
--
0.6
--
V
(BR)
/
T
Average Temperature Coefficient
10
A
I
R
20mA
--
30
100
--
30
100
ppm/
C
S
Long Term Stability
I
R
= 100
A,
--
20
--
--
20
--
ppm/kHR
T
A
= +25
C
0.1
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Typ
Max
Unit
V
(BR)R
Reverse Breakdown Voltage
I
R
= 20mA
V
LM285B-2.5/LM385B-2.5
2.462
2.5
2.538
2.462
2.5
2.538
T
A
= T
low
to T
high
(Note 1)
2.415
--
2.585
2.436
--
2.564
LM285-2.5V/LM385-2.5V
2.425
2.5
2.575
2.425
2.5
2.575
T
A
= T
low
to T
high
(Note 1)
2.400
--
2.600
2.400
--
2.600
I
RMIN
Minimum Operating Current
A
T
A
= +25
C
--
13
20
--
13
20
T
A
= T
low
to T
high
(Note 1)
--
--
30
--
--
30
V
(BR)R
Reverse Breakdown Voltage
mV
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25
C
--
--
1.0
--
--
2.0
T
A
= T
low
to T
high
(Note 1)
--
--
1.5
--
--
2.5
1.0mA = I
R
= 20mA, T
A
= +25
C
--
--
10
--
--
20
T
A
= T
low
to T
high
(Note 1)
--
--
20
--
--
25
Z
Reverse Dynamic Impedance
I
R
= 100
A
--
0.6
--
--
0.6
--
V
(BR)
/
T
Average Temperature Coefficient
20
A
I
R
20mA
--
30
100
--
30
100
ppm/
C
S
Long Term Stability
I
R
= 100
A,
--
20
--
--
20
--
ppm/kHR
T
A
= +25
C
0.1
C
Note: 1. T
low
= 40
C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
0
C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
T
high
= +85
C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
+70
C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
LM285 / LM285B1.2
LM385 / LM385B1.2
LM285 / LM285B2.5
LM385 / LM385B2.5
3-11
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
RESPONSE TIME TEST CIRCUIT
TYPICAL APPLICATIONS
+15V
180 k
0.1 F
2.5V
60 k
50 k
3
2
7
6
4
V
OUT
= 10V
+
TC911
LM285/385
-2.5V
+15V
LM285/385-1.2V
1 F
R
SET
81 k
2
3
7
6
4
I
OUT
= 1.25V
R
SET
+
TC911
+9V
1.25V
360 k
LM285/385-1.2V
Battery Powered 1.25V Reference
Precision Current Source
10V Reference
LM285/385-1.2V
LM285/385-2.5V
OUTPUT
INPUT
36 k
3-12
TELCOM SEMICONDUCTOR, INC.
PRELIMINARY INFORMATION
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
TYPICAL CHARACTERISTICS
1000
100
1
0.1
0
0.25
0.5
0.75
1.0
1.25
1.5
OUTPUT VOLTAGE (V)
TA = +25
C
10
LM285/385-1.2V: Output Voltage vs
Reverse Current
REVERSE CURRENT (
A)
10
8
6
4
2
0
0.01
0.1
1
10
100
OUTPUT VOLTAGE CHANGE (mV)
REVERSE CURRENT (mA)
LM285/385-1.2V: Output Voltage Change
vs Reverse Current
TA = +25
C
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
FORWARD CURRENT (mA)
FORWARD VOLTAGE (V)
LM285/385-1.2V: Forward Voltage vs
Forward Current
TA = +25
C
OUTPUT
INPUT
5.0
0
1.5
1.0
0.5
0
0
200
400
600
TIME (
sec)
LM285/385-1.2V
Response Time
TA = +25
C
VOLTAGE (V)
10.0
1000
100
1
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT VOLTAGE (V)
10
LM285/385-2.5V: Output Voltage vs
Reverse Current
REVERSE CURRENT (
A)
10
8
6
4
2
0
0.01
0.1
1
10
100
OUTPUT VOLTAGE CHANGE (mV)
REVERSE CURRENT (mA)
LM285/385-2.5V: Output Voltage Change
vs Reverse Current
TA = +25
C
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
FORWARD CURRENT (mA)
FORWARD VOLTAGE (V)
LM285/385-2.5V: Forward Voltage vs
Forward Current
TA = +25
C
OUTPUT
INPUT
5
0
3
2
1
0
0
200
400
600
TIME (
sec)
LM285/385-2.5V
Response Time
10
TA = +25
C
VOLTAGE (V)
TA = +25
C
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