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Datasheet: P0130AA1EA3 (STMicroelectronics)

0.8A SCRs

 

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STMicroelectronics
1/5
P0130AA
SENSITIVE
0.8A SCRs
May 2002 - Ed: 2
MAIN FEATURES:
DESCRIPTION
The P0130AA is a gate sensitive SCR, packaged
in TO-92, used in conjunction of a TN22 A.S.DTM
and of a resistor in electronic starter for fluores-
cent tubelamps.
Symbol
Value
Unit
I
T(RMS)
0.8
A
V
DRM
/V
RRM
100
V
I
GT
1
A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tl = 55C
0.8
A
IT
(AV)
Average on-state current (180 conduction angle)
Tl = 55C
0.5
A
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25C
8
A
tp = 10 ms
7
I
t
I
t Value for fusing
tp = 10ms
Tj = 25C
0.24
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
1
A
P
G(AV)
Average gate power dissipation
Tj = 125C
0.1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
A
K
G
TO-92
P0130AA
2/5
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
Symbol
Test Conditions
P0130AA
Unit
I
GT
V
D
= 12 V R
L
= 140
MIN.
0.1
A
MAX.
1
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 1 k
Tj = 125C
MIN.
0.1
V
V
RG
I
RG
= 10 A
MIN.
8
V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 67 % V
DRM
R
GK
= 1 k
Tj = 125C
MIN.
25
V/s
V
TM
I
TM
= 1.6 A tp = 380 s
Tj = 25C
MAX.
1.95
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.95
V
R
d
Dynamic resistance
Tj = 125C
MAX.
600
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 1 k
Tj = 25C
MAX.
1
A
Tj = 125C
MAX.
100
Symbol
Parameter
Value
Unit
R
th(j-i)
Junction to case (DC)
80
C/W
R
th(j-a)
Junction to ambient (DC)
150
C/W
Part Number
Voltage
Sensitivity
Package
P0130AA
100V
1 A
TO-92
P0130AA
3/5
ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
P0130AA 1EA3
P0130AA
0.2 g
2500
Bulk
P0130AA 2AL3
P0130AA
0.2 g
2000
Ammopack
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature.
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
P 01 30 A A 1EA3
SENSITIVE
SCR
SERIES
CURRENT: 0.8A
SENSITIVITY:
30: 1A
VOLTAGE:
A: 100V
PACKAGE:
A: TO-92
PACKING MODE:
1EA3: TO-92 bulk
2AL3: TO-92 ammopack
Blank
P(W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(av)(A)
Tlead or Ttab (C)
1.1
1.0
0.9
0.7
0.8
0.5
0.6
0.1
0.4
0.3
0.2
0.0
0
25
50
75
100
125
IT(av)(A)
1.2
1.1
1.0
0.8
0.9
0.6
0.7
0.2
0.5
0.4
0.3
0.1
0
25
50
75
100
125
0.0
Tamb(C)
K = [Zth(j-a)/Rth(j-a)]
tp(s)
1.00
0.10
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
P0130AA
4/5
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of It.
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25C
6
5
4
3
2
1
0
0
-20
-40
20
40
60
80
100
120
140
Tj(C)
IH[Rgk]/IH[Rgk=1k ]
Rgk(k
)
0.4
0.6
0.8
1.0
0.2
1.6
1.8
2.0
1.2
1.4
dV/dt[Rgk] / dV/dt[Rgk=1k ]
Rgk(k
)
0
0.1
1.0
10.0
dV/dt[Cgk] / dV/dt[Rgk=1k ]
2
1
0
3
4
5
6
7
0
2
4
6
8
10
Cgk(nF)
1
10
100
1000
0
1
2
3
4
5
6
7
8
ITSM(A)
Non repetitive
Tj initial=25C
Tamb=25C
Repetitive
Numberofcycles
Onecycle
tp=10ms
ITSM(A), I t(A s)
2
2
100.0
10.0
1.0
0.1
0.01
0.10
1.00
10.00
tp(ms)
P0130AA
5/5
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1E+1
1E+0
1E-1
1E-2
VTM(V)
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.35
0.053
B
4.70
0.185
C
2.54
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.50
0.019
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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