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Datasheet: M02N60 (Stanson Technology)

N Channel Mosfet

 

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Stanson Technology

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N Channel MOSFET M02N60
2.0A


FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
I
DSS
and V
DS
(on) Specified at Elevated
Temperature

PIN CONFIGURATION

TO-251 TO-252
1.Gate 2.Drain 3.Source

ABSOLUTE MAXIMUM RATINGS
RATING SYMBOL
VALUE
UNIT
Drain to Current - Continuous
- Pulsed
I
D
I
DM
2.0
9.0
A
Gate-to-Source Voltage Continue
- Non-repetitive
V
GS
V
GSM
+/-20
+/-40
V
V
Total Power Dissipation
TO-251/252
TO-220
P
D

60
60
W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
Single Pulse Drain-to-Source Avalanche Energy Tj = 25
(V
DD
=100V, V
GS
= 10V, I
AS
= 2A, L = 10mH, R
G
= 25)
E
AS
20
mJ
Thermal Resistance Junction to Case
- Junction to Ambient
JC
JA
1.0
62.5
/W
Maximum Lead Temperature for Soldering Purposes, 1/8'' form 10 seconds
T
L
260












Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel MOSFET M02N60
2.0A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
*Pulse Test: Pulse Width 300S, Duty Cycle 2%
**Negligible, Dominated by circuit inductance







PARAMETERS SYMBO
L
MIN
TYP MAX UNIT
CONDITION
Drain-Source Breakdown Voltage V
(BR)DSS
600
Vdc V
GS
=0, I
D
=250uA
Drain-Source Leakage Current
I
DSS

0.1
1.0
mA
mA
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0, Tj=125
Gate-Source Leakage Current-
Forward
I
GSSF
100
nA V
GSF
=20V, V
DS
=0
Gate Threshhold Voltage
V
GS(th)
2.0 4.0
V V
DS
=V
GS
, I
D
=250uA
Drain-Source On-Resistance
R
DS(on)
4.4 Ohm
V
GS
=10V, I
D
=1.2A*
Input Capacitance
C
iss
435 pF
Output Capacitance
C
oss
56 pF
Reverse Transfer Capacitance
C
rss
9.2
pF
V
DS
=25V, V
GS
=0, f=1 MHz
Turn-On Delay Time
t
d(on)
12 nS
Turn-Off Delay Time
T
d(off)
30
nS
V
DD
=300V, I
D
=2.0A,
Rise Time
t
r
21 nS
Fall Time
t
f
24
nS
V
GS
=10V, R
G
=18
Total Gate Charge
Q
g
13 22
nC
Gate-Drain Charge
Q
gd
6.0
nC

V
DS
=400V, I
D
=2.0A
Gate-Drain Charge
Q
gs
2.0
nC V
GS
=10V*
Intemal Drain Inductance
L
D
4.5
nH
Measured from the drain lead
0.25'' From package to center
of die
Internal Drain Inductance
Ls
7.5
nH
Measured from the sorce lead
0.25'' form package to source
bond pad
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VDS
1.5
V
Forward Tum Time
ton
**
nS
Reverse Recovery Time
trr
340
nS
Is=2.0A, VGS=0V
d
IS
/d
t
= 100A/
S
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 2
N Channel MOSFET M02N60

2.0A

N Channel MOSFET M02N60

2.0A
Page 3



Page 4
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