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Datasheet: SST12LP10 (Silicon Storage Technology, Inc.)

2.4 GHz High-Linearity Power AmplifierThe SST12LP10 isA high-performance power amplifie...

 

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Silicon Storage Technology, Inc.
2005 SST Communications Corp.
S71280-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
>26 dB gain across 2.4~2.5 GHz over tempera-
ture 0C to +80C
High linear output power:
~27 dBm P1dB
Meets 802.11g OFDM ACPR requirement up to
23 dBm
Over 20 dBm linear output with total system
EVM<5% for 54 Mbps 802.11g signal
Meets 802.11b ACPR requirement up to 24 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
~19% @ P
OUT
= 20 dBm for 802.11g
~30% @ P
OUT
= 24 dBm for 802.11b
Ultra-low Reference Current
~3 mA Total I
REF
Low idle current
~60 mA I
CQ
High-speed power-up/down
Turn on/off time (10%~90%) <100 ns
Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
~1 dB gain/power variation between 0C to +80C
Low shut-down current (< 0.1 A)
Simple input/output matching
Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP10 is a high-performance power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP10 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the 2.4~2.5 GHz frequency
band. It provides over 26 dB gain with 19% power-added
efficiency @ POUT = 20 dBm for 802.11g and 30% power-
added efficiency @ POUT = 24 dBm for 802.11b.
The SST12LP10 has excellent linearity (over 20 dBm linear
output with total system EVM<5%) which is essential for 54
Mbps 802.11g operation.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control and
ultra-low reference current (~3 mA). These features cou-
pled with low operating current make the SST12LP10 ideal
for the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP10 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
2.4 GHz High-Linearity Power Amplifier
SST12LP10
SST12LP102.4 GHz High-Linearity Power Amplifier
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
2005 SST Communications Corp.
S71280-00-000
1/05
2
FUNCTIONAL BLOCKS
2
5
6
8
16
VCC
1
15
1
14
VCC
b
NC
4
9
11
12
10
13
NC
NC
VREG
1
VREG
2
NC
VCC2
RFOUT
RFOUT
NC
NC
3
RFIN
RFIN
NC
Bias Circuit
7
1280 B1.1
F
UNCTIONAL
B
LOCK
D
IAGRAM
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
3
2005 SST Communications Corp.
S71280-00-000
1/05
PIN ASSIGNMENTS
FIGURE 1: P
IN
A
SSIGNMENTS
FOR
16-
CONTACT
VQFN
PIN DESCRIPTIONS
TABLE 1: P
IN
D
ESCRIPTION
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with
several low inductance, low resistance vias.
NC
1
No Connection
Unconnected pins.
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
NC
4
No Connection
Unconnected pins.
NC
5
No Connection
Unconnected pins.
VREG1
6
PWR
1st stage idle current control
VREG2
7
PWR
2nd stage idle current control
NC
8
No Connection
Unconnected pins.
NC
9
No Connection
Unconnected pins.
RFOUT
10
O
RF output
RFOUT
11
O
RF output
VCC2
12
Power Supply
PWR
Power supply, 2nd stage
NC
13
No Connection
Unconnected pins.
VCCb
14
Power Supply
PWR
Supply voltage for bias circuit
NC
15
No Connection
Unconnected pins.
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.0 1280
5
6
8
16
V
C
C
1
15
14
V
C
C
b
N
C
9
11
12
10
13
N
C
N
C
V
R
E
G
1
V
R
E
G
2
N
C
VCC2
RFOUT
RFOUT
NC
2
1
4
3
NC
RFIN
RFIN
NC
7
1280 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
2005 SST Communications Corp.
S71280-00-000
1/05
4
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 2 through 11 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum
Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pins 2 and 3 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm
Supply Voltage at pins 12, 14, 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pins 6 (V
REF1
) and pin 7 (V
REF2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units
1
: 240C for 3 seconds
1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds
O
PERATING
R
ANGE
Range
Ambient Temp
V
CC
Industrial
-40C to +85C
3.3V
TABLE
2: DC E
LECTRICAL
C
HARACTERISTICS
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 12, 14, 16
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 20 dBm
160
mA
for 802.11g, 23 dBm
230
mA
for 802.11b, 24 dBm
270
mA
I
CQ
Idle Current
for both 802.11b/g to meet EVM @ 20.5 dBm
70
mA
for only 802.11b to meet ACPR @ 22 dBm
50
mA
I
OFF
Shut down current
<0.1
A
V
REG1
Reference Voltage for 1st Stage, without drop resistor
2.70
V
V
REG2
Reference Voltage for 2nd Stage, without drop resistor
2.70
V
T2.0 1280
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
5
2005 SST Communications Corp.
S71280-00-000
1/05
TABLE
3: AC E
LECTRICAL
C
HARACTERISTICS
FOR
C
ONFIGURATION
Symbol
Parameter
Min.
Typ
Max.
Unit
f
L-U
Frequency range
2400
2500
MHz
P
OUT
Output power
@ PIN = -4 dBm 11b signals
22
dBm
@ PIN = -2 dBm 11b signals
24
dBm
@ PIN = -8 dBm 11g signals
18
dBm
@ PIN = -6 dBm 11g signals
20
dBm
G
Small signal gain
26
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
1
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
24
dBm
Meet 11g OFDM 54 MBPS spectrum mask
23
dBm
Added EVM
@ 20.5 dBm output with 11g OFDM 54 MBPS signal
3
3.5
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
<-40
dBc
T3.0 1280
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
2005 SST Communications Corp.
S71280-00-000
1/05
6
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C
FIGURE 2: S-P
ARAMETERS
FIGURE 3: I
N
-
BAND
R
ETURN
L
OSS
FIGURE 4: I
N
-
BAND
G
AIN
F
LATNESS
S11
-14
-12
-10
-8
-6
-4
-2
0
0
1
2
3
4
5
6
S22
-16
-14
-12
-10
-8
-6
-4
-2
0
0
1
2
3
4
5
6
S12
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
S21
-40
-30
-20
-10
0
10
20
30
0
1
2
3
4
5
6
1280 S-Parms.0.0
S11
-14
-12
-10
-8
-6
-4
-2
0
2.3
2.4
2.5
2.6
1277 In-band-R.0.0
S21
20
25
30
2.3
2.4
2.5
2.6
1280 In-band-G.0.0
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
7
2005 SST Communications Corp.
S71280-00-000
1/05
TWO-TONE MEASUREMENTS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C, F1 = 2.45 GH
Z
, F2 = 2.451 GH
Z
FIGURE 5: RF O
UTPUT
P
OWER
FIGURE 6: G
AIN
VS
P
OUT
FIGURE 7: I
CC
VS
P
OUT
FIGURE 8: IM3
VS
P
OUT
FIGURE 9: H
ARMONICS
10
12
14
16
18
20
22
24
26
28
-15
-13
-11
-9
-7
-5
-3
-1
1
P
OUT
(dBm)
P
IN
(dBm)
1280 PoutVSPin.0.0
20
21
22
23
24
25
26
27
28
5
10
15
20
25
30
Pout (dBm)
G
a
in
(
d
B
)
1280 GainVSPout.0.0
0
50
100
150
200
250
300
350
400
450
5
10
15
20
25
30
Pout (dBm )
C
u
r
r
e
n
t
C
o
ns
um
pt
i
o
n
(
m
A
)
1280 CurrVsPout.0.0
0
10
20
30
40
50
60
5
10
15
20
25
30
Pout (dBm )
IM
3
(
d
B
c
)
0
10
20
30
40
50
60
5
10
15
20
25
Pout (dBm )
IM
3
(
d
B
c
)
1280 IM3vsPout.0.0
-60
-50
-40
-30
-20
-10
0
10
15
20
25
30
Pout (dBm )
P
o
w
e
r
L
evel (
d
B
c
)
2nd Harmonic
3rd Harmonic
1280 Harmonics.0.0
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
2005 SST Communications Corp.
S71280-00-000
1/05
8
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C, F = 2.45 GH
Z
WHEN
NOT
SPECIFIED
FIGURE 10: 802.11
G
S
PECTRUM
AT
20/22/23
D
B
M
, A
DDED
EVM @ 2.45 GH
Z
-70
-60
-50
-40
-30
-20
-10
0
2.40E+09
2.42E+09
2.44E+09
2.46E+09
2.48E+09
2.50E+09
Frequency (Hz)
P
o
w
e
r
L
eve
l

(
d
Bc
)
Pout=20dBm
Pout=22dBm
Pout=23dBm
1280 Spectrum1
1g.0.0
0
1
2
3
4
5
15
16
17
18
19
20
Pout (dBm)
A
dde
d
E
V
M
(
%
)
1280 AddEVM.0.0
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
9
2005 SST Communications Corp.
S71280-00-000
1/05
FIGURE 11: 802.11
B
S
IGNAL
O
UTPUT
M
ASK
AT
24
D
B
M
FIGURE 12: T
YPICAL
S
CHEMATIC
FOR
H
IGH
-P
OWER
, H
IGH
-E
FFICIENCY
802.11
B
/
G
A
PPLICATIONS
-70
-60
-50
-40
-30
-20
-10
0
2.35
2.4
2.45
2.5
2.55
Frequency (GHz)
P
o
w
e
r
L
eve
l
(
d
B
c
)
2.412GHz
2.452GHz
2.482GHz
1280 SigOutMsk.0.0
2
5
6
7
8
11
16
15
1
C2 1.2pF
50
/125mil
50
RFOUT
C1 47pF
C3 10pF
C11 47pF
C10 2.4p
50
/140mil
50
RFin
VREG1
VREG2
14
13
L1
12nH/0805
C8 0.1 F
C9 4.7 F
C7 1000pF
Vcc
3
4
10
C5 100pF
C6 0.1 F
R2 0
*
R1 0
*
* R2 and R3 can be adjusted to fit any
reference voltage supply between
2.7~3.3V, e.g. R1=R2=0
for
VREG1=VREG2=2.7V and R1=100
R2=100
for VREG1=VREG2=2.8V.
Bias circuit
12
9
C4 10pF
1280 Schematic.0.1
Center slug to RF ground
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
2005 SST Communications Corp.
S71280-00-000
1/05
10
PRODUCT ORDERING INFORMATION
Valid combinations for SST12LP10
SST12LP10-QVC
SST12LP10-QVCE
SST12LP10 Evaluation Kits
SST12LP10-QVC-K
SST12LP10-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
SST12LP
10
- QVC
E
SSTxxLP
xx
-
XXX
X
Environmental Attribute
E
1
= non-Pb contact (lead) finish
Package Modifier
C = 16 contact
Package Type
QV = VQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
2 = 2.4 GHz
Product Line
1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder.
SST non-Pb solder devices are "RoHS Compliant".
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
11
2005 SST Communications Corp.
S71280-00-000
1/05
PACKAGING DIAGRAMS
16-
CONTACT
V
ERY
-
THIN
Q
UAD
F
LAT
N
O
-
LEAD
(VQFN)
SST P
ACKAGE
C
ODE
: QVC
TABLE
4: R
EVISION
H
ISTORY
Revision
Description
Date
00
S71280: SST conversion of data sheet GP1210
Jan 2005
Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions.
2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and possibly to certain V
SS
leads.
This paddle can be soldered to the PC board; it is suggested to connect this paddle to the V
SS
of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-0.0
1.7
0.5 BSC
See notes
2 and 3
Pin #1
0.30
0.18
0.076
1.7
0.2
3.00 0.10
3.00 0.10
0.05 Max
0.45
0.35
1.00
0.80
Pin #1
TOP VIEW
BOTTOM VIEW
SIDE VIEW
1mm
Preliminary Specifications
2.4 GHz High-Linearity Power Amplifier
SST12LP10
2005 SST Communications Corp.
S71280-00-000
1/05
12
CONTACT INFORMATION
Marketing
SST Communications Corp.
2951 28th Street, Ste. 2040
Santa Monica, CA 90405
Tel: 310-581-1650 x27
Fax: 310-581-1663
Sales
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
SST Macao
Les Crowder
H. H. Chang
Technical Sales Support - Major Accounts
Senior Director, Sales
1922 Colina Salida Del Sol
Room A, 8th Floor,
San Clemente, CA 92673-3652
USA
Macao Financial Centre,
Tel: 949-495-6437
No. 230-246, Rua Pequim, Macao
Cell: 714-813-6636
Tel: (853) 706-022
Fax: 949-495-6364
Fax: (853) 706-023
E-mail: lcrowder@sst.com
E-mail: hchang@sst.com
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
SST Communications Co.
Ralph Thomson
Andy Chang
Applications Manager
Director of Sales
Mark House
2F, No. 415, Tiding Blvd., Sec.2,
9-11 Queens Road
Neihu, Taipei,
Hersham KT12 5LU
UK
Taiwan, R.O.C.
Tel: +44 (0) 1869 321 431
Tel: 02-2656-2888 x220
Cell: +44 (0) 7787 508 919
Fax: 02-2656-2889
E-mail: rthomson@sst.com
E-mail: achang@sst.com
JAPAN
KOREA
SST Japan
SST Korea
Yashushi Yoshinaga
Charlie Shin
Sales Manager
Country Manager
6F Kose #2, 1-14-20 Shin-Yokohama,
Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong,
Kohoku-ku, Yokohama 222-0033
Bundang-Gu, Sungnam, Kyunggi-Do
Kanagawa, Japan
Korea, 463-020
Tel: (81) 45-471-1851
Tel: (82) 31-715-9138
Fax: (81) 45-471-3285
Fax: (82) 31-715-9137
Email: yoshi@sst.com
Email: cshin@sst.com
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086 Telephone 408-735-9110 Fax 408-735-9036
www.SuperFlash.com or www.sst.com
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