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Datasheet: SST11LP12 (Silicon Storage Technology, Inc.)

4.9-5.8 GHz High-Linearity Power AmplifierThe SST11LP12 isA high-power, high-gain power...

 

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Silicon Storage Technology, Inc.
2005 SST Communications Corp.
S71278-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
Typically 35 dB gain across 4.9-5.8 GHz over
temperature 0C to +85C
High linear output power:
~28 dBm P1dB (Pulsed single-tone signal)
Meet 802.11a OFDM ACPR requirement up to
23+ dBm over ~ entire band
Added EVM~4% up to 21 dBm for
54 Mbps 802.11a signal
High power-added efficiency/Low operating
current for 54 Mbps 802.11a applications
~12% @ P
OUT
= 21 dBm for 54 Mbps
Built-in Ultra-low I
REF
power-up/down control
I
REF
<3 mA
Low idle current
~130 mA I
CQ
High speed power up/down
Turn on/off time (10%~90%) <100 ns
Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
~1.5/1.0 dB gain/power variation between
0C to +85C
~1 dB detector variation over 0C to +85C
Low shut-down current (< 0.1 A)
On-chip power detection
20 dB dynamic range on-chip power detection
Simple input/output matching
Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11a)
Japan WLAN
HyperLAN2
Multimedia
PRODUCT DESCRIPTION
The SST11LP12 is a high-power, high-gain power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP12 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz). It typically provides 35 dB gain with 16% power-
added efficiency @ P
OUT
= 23 dBm.
The SST11LP12 has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23+ dBm. SST11LP12 also has wide-range
(>20 dB), temperature-stable (~1 dB over 85C), single-
ended/differential power detectors which lower users' cost
on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I
REF
<3 mA) makes the
SST11LP12 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11LP12 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11LP12 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
SST1LP124.9-5.8 GHz High-Linearity Power Amplifier
2
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
FUNCTIONAL BLOCKS
2
5
6
8
16
VCC
1
15
1
14
VCC
3
VCC
2
4
9
11
12
10
13
NC
NC
VREF
1
VREF
2
Det_r
ef
NC
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
VCCb
Bias Circuit
7
1278 B1.1
F
UNCTIONAL
B
LOCK
D
IAGRAM
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
3
2005 SST Communications Corp.
S71278-00-000
1/05
PIN ASSIGNMENTS
FIGURE 1: P
IN
A
SSIGNMENTS
FOR
16-
CONTACT
VQFN
PIN DESCRIPTIONS
TABLE 1: P
IN
D
ESCRIPTION
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
NC
1
No Connection
Unconnected pins
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
VCCb
4
Power Supply
PWR
Supply voltage for bias circuit
NC
5
No Connection
Unconnected pins.
VREF1
6
PWR
1st and 2nd stage current control
VREF2
7
PWR
3rd stage current control
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
NC
12
No Connection
Unconnected pins.
NC
13
No Connection
Unconnected pins.
VCC3
14
Power Supply
PWR
Power supply, 3rd stage
VCC2
15
Power Supply
PWR
Power supply, 2nd stage
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.0 1278
5
6
8
16
V
C
C
1
15
14
V
C
C
3
V
C
C
2
9
11
12
10
13
N
C
N
C
V
R
E
F
1
V
R
E
F
2
D
e
t
_
r
e
f
NC
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
VCCb
7
1278 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
4
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 2 through 10 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum
Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 4, 14, 15, 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units
1
: 240C for 3 seconds
1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds
O
PERATING
R
ANGE
Range
Ambient Temp
V
CC
Industrial
-40C to +85C
3.3V
TABLE
2: DC E
LECTRICAL
C
HARACTERISTICS
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 4, 14, 15, 16
2.7
3.3
3.6
V
I
CC
Supply Current @ P
OUT
= 23 dBm at V
CC
= 3.3V
400
mA
I
CQ
V
CC
quiescent current
130
mA
I
OFF
Shut down current
<1.0
A
V
REG
Reference Voltage for recommended application
2.85
V
T2.0 1278
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
5
2005 SST Communications Corp.
S71278-00-000
1/05
TABLE
3: AC E
LECTRICAL
C
HARACTERISTICS
FOR
C
ONFIGURATION
Symbol
Parameter
Min
Typ
Max
Unit
F
L-U
Frequency range
4.9
5.8
GHz
Linearity
Output power with 4% EVM at
54 Mbps OFDM signal when operating at 3.3V V
CC
21
dBm
Output power level with 802.11a mask compliance
across 4.9-5.8 GHz
23
dBm
G
Linear gain across 4.9~5.8GHz
32
dB
G
VAR
Gain variation over band (4.9-5.8 MHz)
3
dB
Gain variation over band (4.9-5.35 MHz)
1.5
dB
Gain variation over band (5.7-5.8 MHz)
1
dB
Gain variation over channel (20 MHz)
0.2
dB
Det
Power detector output voltage range
0.5
2.0
V
Det_ref
Power detector output reference
0.5
0.6
V
S
Power detector sensitivity
0.03
V/dB
Stability
Spurious output@ 25.5 dBm
54 Mbps OFDM signal when VSWR = 6:1 all angle
-60
dBc
Output VSWR
Ruggedness
Survivable time@ 25.5 dBm (to 50
)
54 Mbps OFDM signal when VSWR = 10:1 all angle
10
second
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
-40
dBc
T3.0 1278
6
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C, V
REG1,2
= 2.85V
UNLESS
OTHERWISE
NOTED
FIGURE 2: S-P
ARAMETERS
S11
0
4
6
8
10
Frequency (GHz)
S22
S21
0
6
10
S12
-90
-80
-70
-60
-50
-40
-30
10
2
8
2
4
Frequency (GHz)
-30
-20
-10
0
10
20
30
40
Frequency (GHz)
0
4
6
8
2
0
6
10
8
2
4
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Frequency (GHz)
1278 S-Parms.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
7
2005 SST Communications Corp.
S71278-00-000
1/05
TWO-TONE MEASURMENTS
T
EST
C
ONDITIONS
:
F
= 1 MH
Z
FIGURE 3: O
UTPUT
P
OWER
VERSUS
I
NPUT
P
OWER
FIGURE 4: P
OWER
S
UPPLY
C
URRENT
VERSUS
O
UTPUT
P
OWER
0
5
10
15
20
25
30
-21
-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
Output P
o
wer (dBm)
Input Power (dBm)
4.9 GHz
5.25 GHz
5.8 GHz
1278 OutVInp
.0.0
100
150
200
250
300
350
400
450
500
550
600
14
15
16
17
18
19
20
21
22
23
24
25
26
27
I
CC
_total (mA)
Output Power (dBm)
4.9 GHz
5.25 GHz
5.8 GHz
1278 ICCvOut.0.0
8
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
FIGURE 5: P
OWER
G
AIN
VERSUS
O
UTPUT
P
OWER
FIGURE 6: IMD3
VERSUS
O
UTPUT
P
OWER
20
22
24
26
28
30
32
34
36
38
40
15
16
17
18
19
20
21
22
23
24
25
26
Gain (dB)
Output Power (dBm)
4.9 GHz
5.25 GHz
5.8 GHz
1278 PGain
vOutP
.0.0
-50
-45
-40
-35
-30
-25
-20
14
15
16
17
18
19
20
21
22
23
24
25
26
27
IMD3 (dBc)
Output Power (dBm)
4.9 GHz
5.25 GHz
5.8 GHz
1278 IMD3vOutP
.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
9
2005 SST Communications Corp.
S71278-00-000
1/05
ACPR FOR 54 MBPS OFDM SIGNALS
FIGURE 7: F
REQUENCY
= 4.9 GH
Z
AT
P
OUT
= 23.5
D
B
M
WITH
I
CC
= 395
M
A
FIGURE 8: F
REQUENCY
= 5.18 GH
Z
AT
P
OUT
= 23.5
D
B
M
WITH
I
CC
= 390
M
A
1278 A
CPR.4.9GHz.0.0
1278 A
CPR.4.9GHz.0.0
10
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
FIGURE 9: F
REQUENCY
= 5.32 GH
Z
AT
P
OUT
= 23.5
D
B
M
WITH
I
CC
= 385
M
A
FIGURE 10: F
REQUENCY
= 5.8 GH
Z
AT
P
OUT
= 23.5
D
B
M
WITH
I
CC
= 365
M
A
1278 A
CPR.5.32GHz.0.0
1278 A
CPR.5.8GHz.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
11
2005 SST Communications Corp.
S71278-00-000
1/05
EVM FOR 54 MBPS OPERATION
FIGURE 11: EVM
VERSUS
O
UTPUT
P
OWER
FIGURE 12: T
YPICAL
A
PPLICATION
0
1
2
3
4
5
6
7
8
9
10
15
16
17
18
19
20
21
22
23
EVM (%)
Output Power (dBm)
4.92 GHz
5.18 GHz
5.805 GHz
1278 EVMvOutP
.1.0
5.32 GHz
VCC
50
100pF
50
RFin
VREG1
10F
0.1 F
4.7pF*
100pF
0.1F
40~60mil/10~12mil
10
2
5
6
7
8
9
11
12
16
15
14
13
3
4
1
50
RFOUT
0.5 pF/0402 Hi-Q, typically
Johanson S-series
80mil/60mil**
91
VREG2
Det_ref
Det
0.1F*
10pF
10pF
0.1F
0.1F 25
50
290
*As close as possible to package
**For 8-10 mil FR4 dielectric board
Bias Circuit
1278 Schematic.0.1
12
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
PRODUCT ORDERING INFORMATION
Valid combinations for SST11LP12
SST11LP12-QVC
SST11LP12-QVCE
SST11LP12 Evaluation Kits
SST11LP12-QVC-K
SST11LP12-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
SST11LP
12
- QVC
E
SSTxxLP
xx
-
XXX
X
Environmental Attribute
E
1
= non-Pb contact (lead) finish
Package Modifier
C = 16 contact
Package Type
QV = VQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
1 = 4.9-5.8 GHz
Product Line
1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder.
SST non-Pb solder devices are "RoHS Compliant".
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
13
2005 SST Communications Corp.
S71278-00-000
1/05
PACKAGING DIAGRAMS
16-
CONTACT
V
ERY
-
THIN
Q
UAD
F
LAT
N
O
-
LEAD
(VQFN)
SST P
ACKAGE
C
ODE
: QVC
TABLE
4: R
EVISION
H
ISTORY
Revision
Description
Date
00
S71278: SST conversion of data sheet GP1112
Jan 2005
Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions.
2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and possibly to certain V
SS
leads.
This paddle can be soldered to the PC board; it is suggested to connect this paddle to the V
SS
of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-0.0
1.7
0.5 BSC
See notes
2 and 3
Pin #1
0.30
0.18
0.076
1.7
0.2
3.00 0.10
3.00 0.10
0.05 Max
0.45
0.35
1.00
0.80
Pin #1
TOP VIEW
BOTTOM VIEW
SIDE VIEW
1mm
14
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
2005 SST Communications Corp.
S71278-00-000
1/05
CONTACT INFORMATION
Marketing
SST Communications Corp.
2951 28th Street, Ste. 2040
Santa Monica, CA 90405
Tel: 310-581-1650 x27
Fax: 310-581-1663
Sales
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
SST Macao
Les Crowder
H. H. Chang
Technical Sales Support - Major Accounts
Senior Director, Sales
1922 Colina Salida Del Sol
Room A, 8th Floor,
San Clemente, CA 92673-3652
USA
Macao Financial Centre,
Tel: 949-495-6437
No. 230-246, Rua Pequim, Macao
Cell: 714-813-6636
Tel: (853) 706-022
Fax: 949-495-6364
Fax: (853) 706-023
E-mail: lcrowder@sst.com
E-mail: hchang@sst.com
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
SST Communications Co.
Ralph Thomson
Andy Chang
Applications Manager
Director of Sales
Mark House
2F, No. 415, Tiding Blvd., Sec.2,
9-11 Queens Road
Neihu, Taipei,
Hersham KT12 5LU
UK
Taiwan, R.O.C.
Tel: +44 (0) 1869 321 431
Tel: 02-2656-2888 x220
Cell: +44 (0) 7787 508 919
Fax: 02-2656-2889
E-mail: rthomson@sst.com
E-mail: achang@sst.com
JAPAN
KOREA
SST Japan
SST Korea
Yashushi Yoshinaga
Charlie Shin
Sales Manager
Country Manager
6F Kose #2, 1-14-20 Shin-Yokohama,
Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong,
Kohoku-ku, Yokohama 222-0033
Bundang-Gu, Sungnam, Kyunggi-Do
Kanagawa, Japan
Korea, 463-020
Tel: (81) 45-471-1851
Tel: (82) 31-715-9138
Fax: (81) 45-471-3285
Fax: (82) 31-715-9137
Email: yoshi@sst.com
Email: cshin@sst.com
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086 Telephone 408-735-9110 Fax 408-735-9036
www.SuperFlash.com or www.sst.com
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