HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: D10SB10 (Shanghai Sunrise Electronics)

Single Phase Glass Passivated Sip Bridge Rectifier

 

Download: PDF   ZIP
Shanghai Sunrise Electronics
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
Glass passivated junction chip
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Surge overload rating: 200 A peak
High temperature soldering guaranteed:
250
o
C/10sec/ 0.375" (9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
Case: UL-94 Class V-O recognized flame
retardant epoxy
Polarity: Polarity symbol marked on body
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
D10SB
10
D10SB
20
D10SB
40
D10SB
60
D10SB
80
D10SB
100
UNITS
V
RRM
100
200
400
600
800
1000
V
V
RMS
70
140
280
420
560
700
V
V
DC
100
200
400
600
800
1000
V
V
F
V
Maximum DC Reverse Current
T
a
=25
o
C
A
(at rated DC blocking voltage)
T
a
=125
o
C
A
Storage and Operating Junction Temperature T
STG
,T
J
o
C
http://www.sse-diode.com
D10SB10 THRU D10SB100
-55 to + 150
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive
load,derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
a
=70
o
C)
I
F(AV)
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
I
FSM
200
A
SINGLE PHASE GLASS
Maximum Instantaneous Forward Voltage
(at forward current 5.0ADC)
10
PASSIVATED SIP BRIDGE RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 10A
I
R
1.1
5
500
D10SB
Dimensions in inches and (millimeters)
TECHNICAL
SPECIFICATION
© 2017 • ICSheet
Contact form
Main page