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Datasheet: Q62702-C1552 (Siemens Semiconductor Group)

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

 

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Siemens Semiconductor Group
Semiconductor Group
1
NPN Silicon AF Transistors
BCW 60
BCX 70
5.91
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
BCX 70 K
Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
SOT-23
B
E
C
1
2
3
1)
For detailed information see chapter Package Outlines.
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30 Hz and 15 kHz
q
Complementary types: BCW 61, BCX 71 (PNP)
Semiconductor Group
2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
S
= 71 C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
32
100
200
330
150
65 ... + 150
Emitter-base voltage
V
EB0
Peak base current
I
BM
200
32
45
32
32
45
BCW 60 FF
BCW 60
BCX 70
5
Junction - ambient
1)
R
th JA
K/W
Junction - soldering point
R
th JS
310
240
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
BCW 60
BCX 70
Semiconductor Group
3
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BCW 60, BCW 60 FF
BCX 70
V
(BR)CE0
32
45


nA
nA
A
A
Collector cutoff current
V
CB
= 32 V
BCW 60, BCW 60 FF
V
CB
= 45 V
BCX 70
V
CB
= 32 V,
T
A
= 150 C BCW 60, BCW 60 FF
V
CB
= 45 V,
T
A
= 150 C BCX 70
I
CB0






20
20
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
BCW 60, BCW 60 FF
BCX 70
V
(BR)CB0
32
45


Emitter-base breakdown voltage
I
E
= 1
A
V
(BR)EB0
5
DC current gain
1)
I
C
= 10
A,
V
CE
= 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
I
C
= 2 mA,
V
CE
= 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
I
C
= 50 mA,
V
CE
= 1 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h
FE
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
170
250
350
500






220
310
460
630



nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
20
1)
Pulse test:
t
300
s,
D
2 %.
BCW 60
BCX 70
Semiconductor Group
4
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
V
CEsat

0.12
0.20
0.25
0.55
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
V
BEsat

0.70
0.83
0.85
1.05
Base-emitter voltage
I
C
= 10
A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
1)
V
BE (on)

0.55
0.52
0.65
0.78

0.75
DC characteristics
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
250
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
8
k
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h
11e



2.7
3.6
4.5
7.5



10
4
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h
12e


1.5
2.0
2.0
3.0


Unit
Values
Parameter
Symbol
min.
typ.
max.
1)
Pulse test:
t
300
s,
D
2 %.
BCW 60
BCX 70
Semiconductor Group
5
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
dB
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 1 kHz,
f
= 200 Hz
BCW 60 A to BCX 70 K
BCW 60 FF, BCW 60 FN
F

2
1

2
Unit
Values
Parameter
Symbol
min.
typ.
max.
AC characteristics
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h
21e



200
260
330
520



s
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h
22e



18
24
30
50



V
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 10 Hz ... 50 Hz
BCW 60 FF, BCW 60 FN
V
n
0.135
BCW 60
BCX 70
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