HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: Q62702-C1504 (Siemens Semiconductor Group)

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

 

Download: PDF   ZIP
Siemens Semiconductor Group
Semiconductor Group
1
PNP Silicon AF Transistors
BC 807
BC 808
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
5As
5Bs
5Cs
5Es
5Fs
5Gs
SOT-23
B
E
C
1
2
3
1)
For detailed information see chapter Package Outlines.
q
For general AF applications
q
High collector current
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BC 817, BC 818 (NPN)
5.91
Semiconductor Group
2
BC 807
BC 808
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
A
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
C
= 79 C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
1)
R
th JA
285
K/W
500
1
330
150
65 ... + 150
Emitter-base voltage
V
EB0
Base current
I
B
mA
100
45
25
50
30
BC 807
BC 808
Peak base current
I
BM
200
5
5
Junction - soldering point
R
th JS
215
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Semiconductor Group
3
BC 807
BC 808
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 100 mA;
V
CE
= 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
I
C
= 300 mA;
V
CE
= 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 807
BC 808
V
(BR)CE0
45
25


nA
A
Collector cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 C
I
CB0


100
50
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A
BC 807
BC 808
V
(BR)CB0
50
30


Emitter-base breakdown voltage,
I
E
= 10
A
V
(BR)EB0
5
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
CEsat
0.7
h
FE
100
160
250
60
100
170
160
250
350


250
400
630


Base-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
BEsat
2
nA
Emitter cutoff current,
V
EB
= 4 V
I
EB0
100
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
200
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
10
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
60
1)
Pulse test:
t
300
s,
D
2 %.
Semiconductor Group
4
BC 807
BC 808
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB0
= 25 V
Semiconductor Group
5
BC 807
BC 808
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
)
h
FE
= 10
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 1 V
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
)
h
FE
= 10
© 2019 • ICSheet
Contact form
Main page