HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: D10SBS4 (Shindengen Electric Mfg)

Schottky Rectifiers (sbd) (40v 10a)

 

Download: PDF   ZIP
Shindengen Electric Mfg
D10SBS4
40V 10A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
SHINDENGEN
Switching power supply
Home Appliances, Office Equipment
Telecommunication, Factory Automation
APPLICATION
Thin Single In-Line Package
SBD Bridge
Low V
F
FEATURES
Case : 3S
Schottky Rectifiers (SBD)
SBD Bridges
Absolute Maximum Ratings (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
40
V
Repetitive Peak Surge Reverse Voltage
V
RRSM
Pulse width 0.5ms, duty 1/40
45
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load With heatsink Tc=67
10
A
50Hz sine wave, R-load Without heatsink Ta=25
3.4
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
100
A
Repetitive Peak Surge Reverse Power
P
RRSM
Pulse width 10s, Rating of per diode, Tj=25
330
W
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque
0.5Nm
0.8
Nm
Electrical Characteristics (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=5A, Pulse measurement, Rating of per diode
Max.0.55
V
Reverse Current
I
R
V
R
=V
RM
,
Pulse measurement, Rating of per diode
Max.3.5
mA
Junction Capacitance
Cj
f=1MHz, VR=10V, Rating of per diode
TYP 180
pF
jc
junction to case With heatsink
Max.5.5
Thermal Resistance
jl
junction to lead Without heatsink
Max.6
/W
ja
junction to ambient Without heatsink
Max.30
Forward Voltage
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
D10SBS4
Tc=150
C [MAX]
Tc=25
C [MAX]
Pulse measurement per diode
Tc=150
C [TYP]
Tc=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
Junction Capacitance
100
1000
D10SBS4
0.1
1
10
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Reverse Voltage V
R
[V]
Junction Capacitance Cj [pF]
f=1MHz
Tc=25
C
TYP
per diode
Reverse Current
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
35
40
D10SBS4
Tc=150
C [MAX]
Tc=150
C [TYP]
Pulse measurement per diode
Tc=125
C [TYP]
Tc=100
C [TYP]
Tc=75
C [TYP]
Reverse Voltage V
R
[V]
Reverse Current I
R
[mA]
0
5
10
15
20
0
10
20
30
40
50
D10SBS4
0.3
Reverse Power Dissipation
Tj = 150
C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
Reverse Voltage V
R
[V]
Reverse Power Dissipation P
R
[W]
0
t
p
V
R
T
D=t
p
/T
© 2017 • ICSheet
Contact form
Main page