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Datasheet: TN1215R (SemiWell Semiconductor)

Silicon Controlled Rectifiers

 

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SemiWell Semiconductor
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
=108 C
7.6
A
I
T(RMS)
R.M.S On-State Current
180 Conduction Angle
12
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
132
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
87
A
2
s
di/dt
Critical rate of rise of on-state current
50
A/
P
GM
Forward Peak Gate Power Dissipation
5
W
P
G(AV)
Forward Average Gate Power Dissipation
0.5
W
I
FGM
Forward Peak Gate Current
2
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Aug, 2003. Rev. 0
TN1215R
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 12 A )
Low On-State Voltage (1.3V(Typ.) @ I
TM
)
General Description
Standard gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability and
also suitable for over voltage protection ,motor control circuit in
power tool,inrush current limit circuit and heating control system.
3. Gate
1. Cathode
Symbol
1/5
SemiWell
Semiconductor
Silicon Controlled Rectifiers
D-PAK
1
2
3
2. Anode
STANDARD TYPE
2
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
AK
= V
DRM
T
C
= 25 C
T
C
= 125 C


10
200
V
TM
Peak On-State Voltage (1)
I
TM
= 24 A tp = 380
1.6
V
I
GT
Gate Trigger Current (2)
V
AK
= 6 V(DC), R
L
=10
T
C
= 25 C
15
mA
V
GT
Gate Trigger Voltage (2)
V
D
=6 V(DC), R
L
=10
T
C
= 25 C
1.5
V
V
GD
Non-Trigger Gate Voltage (1)
V
AK
= 12 V, R
L
=100
T
C
= 125 C
0.2
V
dv/dt
Critical Rate of Rise Off-State
Voltage
Linear slope up to V
D
= V
DRM
67%
Gate open T
C
= 125 C
200
V/
I
H
Holding Current
I
T
= 100mA , Gate Open
T
C
= 25 C
20
mA
R
th(j-c)
Thermal Impedance
Junction to case
1.3
C/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
70
C/W
TN1215R
2/5
Notes :
1. Pulse Width
1.0 ms , Duty cycle
1%
2. R
GK
Current not Included in measurement.
-50
0
50
100
150
0.1
1
10
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature[
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
10
1

T
r
an
sient
T
h
e
r
ma
l Im
pe
dance [
o
C/
W
]
Time (sec)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0
10
1
10
2
125
o
C
25
o
C
O
n
-S
ta
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
0
1
2
3
4
5
6
7
8
9
40
60
80
100
120
140
= 180
o
Max
.

All
o
w
able C
a
se T
e
m
per
atur
e [
o
C]
Average On-State Current [A]
10
-1
10
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
I
GM
(2A
)
V
GD
(0.2V)
P
G(AV)
(0.5W)
P
GM
(5W)
V
GM
(5V)
25
o
C
Gate Vol
t
age [V
]
Gate Current [mA]
Fig 2. Maximum Case Temperature
: Conduction Angl e
360
2
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
3/5
TN1215R
Fig 1. Gate Characteristics
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(2
5
o
C)
Junction Temperature[
o
C]
0
1
2
3
4
5
6
7
0
2
4
6
8
10
= 30
o
= 60
o
= 90
o
= 120
o
= 180
o
M
a
x
.
Av
er
age
Pow
e
r
D
i
s
s
i
p
a
t
i
o
n [
W
]
Average On-State Current [A]
-50
0
50
100
150
0.1
1
10
I
H
(t
o
C)
I
H
(25
o
C)
Junction Temperature[
o
C]
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
4/5
TN1215R
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
6.48
6.604
6.73
0.255
0.26
0.265
B
5.0
5.08
5.21
0.197
0.2
0.205
C
7.42
7.8
8.18
0.292
0.307
0.322
D
2.184
2.286
2.388
0.086
0.09
0.094
E
0.762
0.813
0.864
0.03
0.032
0.034
F
1.016
1.067
1.118
0.04
0.042
0.044
G
2.286
0.09
H
2.286
0.09
I
0.534
0.61
0.686
0.021
0.024
0.027
J
1.016
1.067
1.118
0.04
0.042
0.044
K
0.508
0.02
L
0.762
0.03
1.57
0.06
TN1215R
TO-252(D-PAK) Package Dimension
1. Cathode
2. Anode
3. Gate
A
B
C
D
E
G
F
3
2
1
H
I
J
K
L
5/5
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