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Datasheet: STP6A60 (SemiWell Semiconductor)

Bi-directional Triode Thyristor

 

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SemiWell Semiconductor
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 100 C
6.0
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
60/66
A
I
2
t
I
2
t
18
A
2
s
P
GM
Peak Gate Power Dissipation
3.0
W
P
G(AV)
Average Gate Power Dissipation
0.3
W
I
GM
Peak Gate Current
2.0
A
V
GM
Peak Gate Voltage
10
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Mass
2.0
g
Aug, 2003. Rev. 3
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 6 A )
High Commutation dv/dt
Non-isolated Type
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
2.T2
3.Gate
1.T1
Symbol
TO-220
1/5
STP6A60
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
1
2
3
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
1.0
mA
V
TM
Peak On-State Voltage
I
T
= 8 A, Inst. Measurement
1.5
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
20
mA
I
-
GT1
20
I
-
GT3
20
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -3.0 A/ms,
V
D
=2/3 V
DRM
5.0
V/
I
H
Holding Current
10
mA
R
th(j-c)
Thermal Impedance
Junction to case
2.8
C/W
STP6A60
2/5
0
1
2
3
4
5
6
7
8
90
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Al
low
able
Case
T
e
mperature [
o
C]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0
10
1
10
2
125
o
C
25
o
C
On-St
a
te C
u
rr
e
n
t [
A
]
On-State Voltage [V]
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
P
o
w
e
r
D
i
ssi
pa
ti
o
n
[W
]
RMS On-State Current [A]
-50
0
50
100
150
0.1
1
10
V
+
GT1
V
_
GT1
V
GT
(t
o
C)
V
_
GT3
V
GT
(25
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
0
10
20
30
40
50
60
70
80
60Hz
50Hz
S
u
rge
On-S
ta
te
C
u
rren
t
[A
]
Time (cycles)
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
I
GM
(2
A
)
25
P
G(AV)
(0.3W)
P
GM
(3W)
V
GM
(10V)
Ga
t
e
V
o
l
t
age

[V
]
Gate Current [mA]
3/5
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
STP6A60
10
-2
10
-1
10
0
10
1
10
2
1
10

T
r
ansi
e
nt T
h
ermal
Impe
da
nce
[
o
C/
W
]
Time (sec)
-50
0
50
100
150
0.1
1
10
I
_
GT3
I
+
GT1
I
_
GT1
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature [
o
C]
4/5
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
STP6A60
5/5
STP6A60
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.7
10.1
0.382
0.398
B
6.3
6.7
0.248
0.264
C
9.0
9.47
0.354
0.373
D
12.8
13.3
0.504
0.524
E
1.2
1.4
0.047
0.055
F
1.7
0.067
G
2.5
0.098
H
3.0
3.4
0.118
0.134
I
1.25
1.4
0.049
0.055
J
2.4
2.7
0.094
0.106
K
5.0
5.15
0.197
0.203
L
2.2
2.6
0.087
0.102
M
1.25
1.55
0.049
0.061
N
0.45
0.6
0.018
0.024
O
0.6
1.0
0.024
0.039
3.6
0.142
TO-220 Package Dimension
1. T1
2. T2
3. Gate
A
B
C
I
G
L
1
M
E
F
H
K
N
O
2
3
J
D
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