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Datasheet: SFP30N06 (SemiWell Semiconductor)

N-channel Mosfet

 

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SemiWell Semiconductor
1. Gate
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
60
V
I
D
Continuous Drain Current(@T
C
= 25
C)
30
A
Continuous Drain Current(@T
C
= 100
C)
21.2
A
I
DM
Drain Current Pulsed
(Note 1)
120
A
V
GS
Gate to Source Voltage
20
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
430
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
P
D
Total Power Dissipation(@T
C
= 25 C)
79
W
Derating Factor above 25 C
0.53
W/C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
1.90
C/W
R
CS
Thermal Resistance, Case to Sink
-
0.5
-
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
C/W
SFP30N06
September, 2002. Rev. 0.
1/7
Features
Low R
DS
(on) (0.04 )@V
GS
=10V
Low Gate Charge (Typical 27nC)
Low Crss (Typical 75pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175C)
General Description
This Power MOSFET is produced using SemiWell's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
N-Channel MOSFET
TO-220
SemiWell
Semiconductor
1 2
3
Symbol
2. Drain
3. Source
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFP30N06
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
60
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 C
-
0.062
-
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60V, V
GS
= 0V
-
-
1
uA
V
DS
= 48V, T
C
= 150 C
-
-
10
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
100
nA
Gate-Source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
=10 V, I
D
= 15A
-
0.029
0.04
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
930
1210
pF
C
oss
Output Capacitance
-
290
380
C
rss
Reverse Transfer Capacitance
-
75
100
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=30V, I
D
=15A, R
G
=50
see fig. 13.
(Note 4, 5)
-
15
40
ns
t
r
Rise Time
-
25
60
t
d(off)
Turn-off Delay Time
-
60
130
t
f
Fall Time
-
40
90
Q
g
Total Gate Charge
V
DS
=48V, V
GS
=10V, I
D
=30A
see fig. 12.
(Note 4, 5)
-
27
35
nC
Q
gs
Gate-Source Charge
-
6.2
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
11.1
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
30
A
I
SM
Pulsed Source Current
-
-
120
V
SD
Diode Forward Voltage
I
S
=30A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
I
S
=30A,V
GS
=0V,dI
F
/dt=100A/us
-
45
-
ns
Q
rr
Reverse Recovery Charge
-
65
-
nC
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 560uH, I
AS
=30A, V
DD
= 25V, R
G
= 0 , Starting T
J
= 25C
3. ISD 30A, di/dt 300A/us, V
DD
BV
DSS
, Starting T
J
= 25C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
2/7
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
Note : I
D
= 30.0 A
V
GS
,
G
a
t
e
-
S
ou
r
c
e
V
o
l
t
ag
e
[
V
]
Q
g
, Total Gate Charge [nC]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
175
Notes :

1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
, R
e
v
e
rse
Dra
i
n
C
u
rre
nt[
A
]
V
SD
, Source-Drain voltage[V]
0
20
40
60
80
100
120
140
0
20
40
60
80
100
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
,
D
r
ai
n-
So
ur
c
e
O
n
-
R
es
i
s
t
a
nc
e
[
m
]
I
D
, Drain Current [A]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :

1. 250 s Pulse Test
2. T
C
= 25
I
D
,

D
r
ai
n Cu
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
175
o
C
25
o
C
-55
o
C
Notes :

1. V
DS
= 25V
2. 250 s Pulse Test
I
D
,

D
r
ai
n Cu
r
r
e
n
t
[
A
]
V
GS
, Gate-Source Voltage [V]
3/7
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Capacitance Characteristics
Fig 6. Gate Charge Characteristics
SFP30N06
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
0
5
10
15
20
25
30
35
0
500
1000
1500
2000
C
rss
C
oss
C
iss
Notes :

1. V
GS
= 0V
2. f=1MHz
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
a
pa
c
i
ta
n
c
e [pF
]
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :

1. Z
JC
(t) = 1.9
/W M ax.
2. D uty F actor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
JC
(
t
)
,
T
her
mal

Res
pons
e
t
1
, Square W ave Pulse Duration [sec]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
I
D'
D
r
ai
n C
u
r
r
e
n
t
[A]
T
C'
Case Temperature [
o
C]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
I
D
,
Dr
ai
n Cur
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :

1. V
GS
= 10 V
2. I
D
= 15 A
R
DS
(O
N
)
, (N
ormal
i
z
e
d)
Drai
n-S
o
u
r
ce O
n
-R
esi
s
tan
c
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :

1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
,
(
N
or
mali
z
ed)
D
r
ai
n-
S
ource B
r
eak
d
o
w
n

Vol
t
a
g
e
T
J
, Junction Temperature [
o
C]
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 11. Transient Thermal Response Curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
SFP30N06
4/7
5/7
Fig 13. Switching Time Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
SFP30N06
Fig. 12. Gate Charge Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
E
AS
=
L
L
I
AS
2
----
2
1
E
AS
=
L
L
I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
10V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
10V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
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