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Datasheet: SFF4N60 (SemiWell Semiconductor)

N-channel Mosfet

 

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SemiWell Semiconductor
Absolute Maximum Ratings
(
*
Drain current limited by junction temperature)
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
600
V
I
D
Continuous Drain Current(@T
C
= 25
C)
4.0*
A
Continuous Drain Current(@T
C
= 100
C)
2.5*
A
I
DM
Drain Current Pulsed
(Note 1)
16*
A
V
GS
Gate to Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
240
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Total Power Dissipation(@T
C
= 25 C)
33
W
Derating Factor above 25 C
0.26
W/C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
3.79
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
C/W
SFF4N60
Features
R
DS(on)
(Max 2.5 )@V
GS
=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150C)
General Description
This Power MOSFET is produced using Semiwell's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
N-Channel MOSFET
Copyright@Semiwell Semiconductor Inc., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
TO-220F
1 2
3
SemiWell
Semiconductor
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
600
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 C
-
0.6
-
V/C
I
DSS
Drain-Source Leakage Current
V
DS
= 600V, V
GS
= 0V
-
-
10
uA
V
DS
= 480V, T
C
= 125 C
-
-
100
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 30V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -30V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
=10 V, I
D
= 2.0A
-
2.0
2.5
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
545
710
pF
C
oss
Output Capacitance
-
60
80
C
rss
Reverse Transfer Capacitance
-
8
11
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=300V, I
D
=4.0A, R
G
=25
(Note 4, 5)
-
10
30
ns
t
r
Rise Time
-
35
80
t
d(off)
Turn-off Delay Time
-
45
100
t
f
Fall Time
-
40
90
Q
g
Total Gate Charge
V
DS
=480V, V
GS
=10V, I
D
=4.0A
(Note 4, 5)
-
15
20
nC
Q
gs
Gate-Source Charge
-
2.8
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
6.2
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
4.0
A
I
SM
Pulsed Source Current
-
-
16
V
SD
Diode Forward Voltage
I
S
=4.0A, V
GS
=0V
-
-
1.4
V
t
rr
Reverse Recovery Time
I
S
=4.0A, V
GS
=0V, dI
F
/dt=100A/us
-
300
-
ns
Q
rr
Reverse Recovery Charge
-
2.2
-
uC
SFF4N60
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 27.5mH, I
AS
=4.0A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25C
3. I
SD
4.0A, di/dt 200A/us, V
DD
BV
DSS
, Starting T
J
= 25C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Copyright@Semiwell Semiconductor Inc., All rights reserved.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :

1. V
GS
= 0V
2. 250s Pulse Test
25
I
DR
,
Rev
e
rse Drai
n Current
[
A
]
V
SD
, Source-Drain voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :

1. V
DS
= 40V
2. 250s Pulse Test
I
D
,
D
r
ai
n C
u
rre
nt
[
A
]
V
GS
, Gate-Source Voltage [V]
0
4
8
12
16
20
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 4.0 A
V
GS
, Gate-S
o
u
r
c
e Vol
t
ag
e
[
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :

1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
iss
Ca
pa
cit
a
nce
[p
F]
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
Dr
ai
n-
S
o
ur
ce O
n
-
R
esi
s
t
ance
I
D
, Drain Current [A]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :

1. 250s Pulse Test
2. T
C
= 25
I
D
,
D
r
ai
n C
u
rr
e
n
t [A
]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :

1. V
GS
= 10 V
2. I
D
= 2.0 A
R
DS
(
O
N
)
,
(Norm
a
l
i
zed)
Drai
n
-
S
ource O
n
-Resi
s
t
ance
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :

1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
, (Norm
a
l
i
zed)
Drai
n
-
So
urce B
r
ea
k
d
own
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :

1 . Z
J C
(t) = 1 .2 5
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t
),
T
h
e
r
m
a
l

R
e
sp
o
n
s
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
0
1
2
3
4
I
D
, D
r
a
i
n
C
u
rre
n
t
[A
]
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :

1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
Drai
n C
u
rrent
[
A
]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
C
harge
V
G
S
10V
Q
g
Q
gs
Q
gd
3m
A
V
G
S
D
U
T
V
D
S
300nF
50K
200nF
12V
S
am
e Type
as D
U
T
C
harge
V
G
S
10V
Q
g
Q
gs
Q
gd
3m
A
V
G
S
D
U
T
V
D
S
300nF
50K
200nF
12V
S
am
e Type
as D
U
T
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
E
A
S
=
L
I
A
S
2
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
I
D
t
p
E
A
S
=
L
I
A
S
2
----
2
1
E
A
S
=
L
I
A
S
2
----
2
1
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
L
I
D
I
D
t
p
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