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Datasheet: SBP13007-H2 (SemiWell Semiconductor)

High Voltage Fast-switching Npn Power Transistor

 

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SemiWell Semiconductor
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage ( V
BE
= 0 )
700
V
V
CEO
Collector-Emitter Voltage ( I
B
= 0 )
400
V
V
EBO
Emitter-Base Voltage ( I
C
= 0 )
9.0
V
I
C
Collector Current
8.0
A
I
CM
Collector Peak Current ( t
P
5 ms )
16
A
I
B
Base Current
4.0
A
I
BM
Base Peak Current ( t
P
5 ms )
8.0
A
P
C
Total Dissipation at T
C
= 25 C
80
W
T
STG
Storage Temperature
- 65 ~ 150
C
T
J
Max. Operating Junction Temperature
150
C
Thermal Characteristics
Symbol
Parameter
Value
Units
R
JC
Thermal Resistance, Junction-to-Case
1.56
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
SBP13007-H2
Oct, 2002. Rev. 2
1/6
Features
- Very High Switching Speed (Typical 60ns@5.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 390mV@5.0A/1.0A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
High Voltage Fast-Switching NPN Power Transistor
2.Collector
3.Emitter
1.Base
Symbol
TO-220
SemiWell
Semiconductor
1
2
3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
CEV
Collector Cut-off Current
( V
BE
= - 1.5V )
V
CE
= 700V
V
CE
= 700V T
C
= 100 C
-
-
1.0
5.0
mA
V
CEO(sus)
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
I
C
= 10 mA
400
-
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 2.0A I
B
= 0.4A
I
C
= 5.0A I
B
= 1.0A
I
C
= 8.0A I
B
= 2.0A
I
C
= 5.0A I
B
= 1.0A
T
C
= 100 C
-
-
0.5
1.0
2.5
2.5
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 2.0A I
B
= 0.4A
I
C
= 5.0A I
B
= 1.0A
I
C
= 5.0A I
B
= 1.0A
T
C
= 100 C
-
-
1.2
1.6
1.5
V
h
FE
DC Current Gain
I
C
= 2.0A V
CE
= 5V
I
C
= 5.0A V
CE
= 5V
10
5
-
40
40
t
s
t
f
Resistive Load
Storage Time
Fall Time
I
C
= 5.0A V
CC
= 125V
I
B1
= 1.0A I
B2
= - 1.0A
T
P
= 25
-
1.5
0.17
3.0
0.4
t
s
t
f
Inductive Load
Storage Time
Fall Time
V
CC
= 15V I
C
= 5.0A
I
B1
= 1.0A I
B2
= -2.5A
L
C
= 0.35mH V
clamp
= 300V
-
0.8
0.06
2.0
0.12
t
s
t
f
Inductive Load
Storage Time
Fall Time
V
CC
= 15V I
C
= 5.0A
I
B1
= 1.0A I
B2
= -2.5A
L
C
= 0.35mH V
clamp
= 300V
T
C
= 100 C
-
1.0
0.07
3.0
0.15
SBP13007-H2
2/6
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
0
1
2
3
4
5
6
7
8
1
10
T
J
= 25
o
C
t, Ti
me
[u
s]
I
C
, Collector Current [A]
0
2
4
6
8
10
10
100
1000
T
J
= 25
o
C
t, Ti
me
[n
s]
I
C
, Collector Current [A]
0.1
1
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
= 25
o
C
T
J
= 125
o
C
V
BE
, Ba
se
-
E
mi
tt
e
r

Vo
l
t
a
g
e
[V]
I
C
, Collector Current [A]
0.1
1
10
0.01
0.1
1
10
T
J
= 25
o
C
T
J
= 125
o
C
V
CE
,
Collect
o
r
-
E
mit
t
er Volt
ag
e [
V
]
I
C
, Collector Current [A]
0.01
0.1
1
10
0
5
10
15
20
25
30
35
40
45
T
J
= 125
o
C
T
J
= 25
o
C
h
FE
,
DC Cu
rre
nt
Gai
n
I
C
, Collector Current [A]
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I
B
= 200mA
I
B
= 2000mA
I
B
= 1600mA
I
B
= 1200mA
I
B
= 1000mA
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
I
B
= 0mA
I
C
,
Colle
ct
or Cur
r
ent
[
A
]
V
CE
, Collector-Emitter Voltage [V]
SBP13007-H2
3/6
Fig 1. Static Characteristics
Fig 2. DC Current Gain
Fig 3. Collector-Emitter Saturation Voltage
Fig 4. Base-Emitter Saturation Voltage
Fig 5. Resistive Load Fall Time
Fig 6. Resistive Load Storage Time
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
Notes :
V
CE
= 5V
V
CE
= 1V
Note :
h
FE
= 5
Note :
h
FE
= 5
0
100
200
300
400
500
600
700
800
2
4
6
8
10
-3V
-1.5V
-5V
V
BE
(off)
I
C
, C
o
l
l
ecto
r
C
u
rr
e
n
t
[A]
V
CE
, Collector-Emitter Clamp Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 s
10 s
1ms
500 s
DC
I
C
,
Collect
o
r

C
u
rr
ent
[
A
]
V
CE
, Collector-Emitter Clamp Voltage [V]
0
50
100
150
200
0
25
50
75
100
125
Pow
e
r
Der
a
t
i
n
g
Fact
or
(%)
T
C
, Case Temperature (
o
C)
4/6
SBP13007-H2
Fig 8. Reverse Biased Safe Operation
Areas
Fig 7. Safe Operation Areas
Fig 9. Power Derating Curve
Single Pulse
Notes :
T
J
100 C
I
B1
= 2 A
R
BB
= 0
L
C
= 0.2mH
I
B1
V
BE
(off)
R
BB
I
B
I
C
V
Clamp
V
CC
V
CE
D.U.T
L
C
I
B1
V
BE
(off)
R
BB
I
B
I
C
V
CC
V
CE
D.U.T
R
C
SBP13007-H2
5/6
Inductive Load Switching & RBSOA Test Circuit
Resistive Load Switching Test Circuit
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.7
10.1
0.382
0.398
B
6.3
6.7
0.248
0.264
C
9.0
9.47
0.354
0.373
D
12.8
13.3
0.504
0.524
E
1.2
1.4
0.047
0.055
F
1.7
0.067
G
2.5
0.098
H
3.0
3.4
0.118
0.134
I
1.25
1.4
0.049
0.055
J
2.4
2.7
0.094
0.106
K
5.0
5.15
0.197
0.203
L
2.2
2.6
0.087
0.102
M
1.42
1.62
0.056
0.064
N
0.45
0.6
0.018
0.024
O
0.7
0.9
0.027
0.035
3.6
0.142
6/6
TO-220 Package Dimension
1. Base
2. Collector
3. Emitter
A
B
C
I
G
L
1
M
E
F
H
K
N
O
2
3
J
D
C1.0
SBP13007-H2
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