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Datasheet: SBN13001 (SemiWell Semiconductor)

High Voltage Fast-switching Npn Power Transistor

 

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SemiWell Semiconductor
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage ( V
BE
= 0 )
700
V
V
CEO
Collector-Emitter Voltage ( I
B
= 0 )
400
V
V
EBO
Emitter-Base Voltage ( I
C
= 0 )
8.0
V
I
C
Collector Current
0.2
A
I
CM
Collector Peak Current ( t
P
5 ms )
0.4
A
I
B
Base Current
0.1
A
I
BM
Base Peak Current ( t
P
5 ms )
0.2
A
P
C
Total Dissipation at T
A
= 25 C
750
mW
T
STG
Storage Temperature
- 65 ~ 150
C
T
J
Max. Operating Junction Temperature
150
C
Thermal Characteristics
Symbol
Parameter
Value
Units
R
JA
Thermal Resistance, Junction-to-Ambient
166
C/W
SBN13001
Oct, 2002. Rev. 1
1/4
Features
- Very High Switching Speed (Typical 120ns@100mA)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 120mV@100mA/20mA)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
High Voltage Fast-Switching NPN Power Transistor
2.Collector
3.Emitter
1.Base
Symbol
TO-92
SemiWell
Semiconductor
3
2
1
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
CEV
Collector Cut-off Current
( V
BE
= - 1.5V )
V
CE
= 650V
V
CE
= 650V T
C
= 100 C
-
-
1.0
5.0
mA
V
CEO(sus)
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
I
C
= 1 mA
400
-
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 50mA I
B
= 10mA
I
C
= 100mA I
B
= 20mA
-
-
0.3
0.4
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 50mA I
B
= 10mA
-
-
1
V
h
FE
DC Current Gain
I
C
= 50mA V
CE
= 10V
I
C
= 100mA V
CE
= 10V
10
10
-
30
t
on
t
s
t
f
Resistive Load
Turn-On Time
Storage Time
Fall Time
I
C
= 100mA V
CC
= 125V
I
B1
= 20mA I
B2
= -20mA
T
P
= 25
-
0.2
1.5
0.15
1.0
3.0
0.4
t
s
t
f
Inductive Load
Storage Time
Fall Time
V
CC
= 15V I
C
= 100mA
I
B1
= 20mA I
B2
= -50mA
L = 0.35mH V
clamp
= 300V
-
2.0
0.12
4.0
0.3
t
s
t
f
Inductive Load
Storage Time
Fall Time
V
CC
= 15V I
C
= 100mA
I
B1
= 20mA I
B2
= -50mA
L = 0.35mH V
clamp
= 300V
T
C
= 100 C
-
2.4
0.15
5.0
0.4
SBN13001
2/4
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
1E-3
0.01
0.1
10
15
20
25
T
J
= 25
o
C
T
J
= 125
o
C
h
FE
, D
C
Cu
rr
e
n
t Ga
in
I
C
, Collector Current [A]
0.01
0.1
0.01
0.1
1
T
J
=25
o
C
T
J
=125
o
C
V
CE
,Collec
t
or-Emitter Vo
ltage[V]
I
C
,Collector Current[A]
0.01
0.1
0.5
0.6
0.7
0.8
0.9
1.0
T
J
=125
o
C
T
J
=25
o
C
V
BE
,Bas
e-Emitter Vol
t
age[V]
I
C
,Collector Current[A]
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
DC
I
C
,Co
l
le
cto
r
C
u
rr
en
t[
A]
V
CE
,Collector-Emitter Clamp Voltage[V]
0
1
2
3
4
5
0.0
0.1
0.2
0.3
0.4
0.5
I
B
=0mA
I
B
=10mA
I
B
=20mA
I
B
=30mA
I
B
=40mA
I
B
=50mA
I
B
=60mA
I
B
=70mA
I
C
,C
o
l
l
e
c
t
o
r
Curre
nt[A]
V
CE
,Collector-Emitter Voltage[V]
SBN13001
3/4
Fig 1. Static Characteristics
Fig 2. DC Current Gain
Fig 3. Collector-Emitter Saturation Voltage
Fig 4. Base-Emitter Saturation Voltage
Fig 5. Safe Operation Areas
Fig 6. Power Derating Curve
Notes :
V
CE
= 5V
0
50
100
150
200
0
25
50
75
100
125
Po
wer Dera
ti
ng Fa
ct
or(%)
T
C
,Case Temperature(
o
C)
Notes :
h
FE
= 5
Notes :
V
CE
= 5V
Notes :
h
FE
= 5
I
B1
V
BE
(off)
R
BB
I
B
I
C
V
Clamp
V
CC
V
CE
D.U.T
L
C
I
B1
V
BE
(off)
R
BB
I
B
I
C
V
CC
V
CE
D.U.T
R
C
SBN13001
Inductive Load Switching & RBSOA Test Circuit
Resistive Load Switching Test Circuit
4/4
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