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Datasheet: MCK100-8 (SemiWell Semiconductor)

Sensitive Gate Silicon Controlled Rectifiers

 

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SemiWell Semiconductor
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
= 112 C
0.5
A
I
T(RMS)
R.M.S On-State Current
All Conduction Angle
0.8
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
10
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
0.415
A
2
s
P
GM
Forward Peak Gate Power Dissipation
T
A
=25C, Pulse Width
1.0
2
W
P
G(AV)
Forward Average Gate Power Dissipation
T
A
=25C, t = 8.3ms
0.1
W
I
FGM
Forward Peak Gate Current
1
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
MCK100-8
Apr, 2003. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ I
TM
)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
3. Gate
1. Cathode
Symbol
1/5
SemiWell
Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SOT- 89
1
2
3
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
AK
= V
DRM
or V
RRM ;
R
GK
=
1000
T
C
= 25 C
T
C
= 125 C


10
200
V
TM
Peak On-State Voltage (1)
( I
TM
= 1 A, Peak )
1.2
1.7
V
I
GT
Gate Trigger Current (2)
V
AK
= 6 V, R
L
=100
T
C
= 25 C
T
C
= - 40 C


200
500
V
GT
Gate Trigger Voltage (2)
V
D
= 7 V, R
L
=100
T
C
= 25 C
T
C
= - 40 C


0.8
1.2
V
V
GD
Non-Trigger Gate Voltage (1)
V
AK
= 12 V, R
L
=100
T
C
= 125 C
0.2
V
dv/dt
Critical Rate of Rise Off-State
Voltage
V
D
= 0.67 V
DRM ,
Exponential waveform, R
GK
=
1000
T
J
= 125 C
500
800
V/
di/dt
Critical Rate of Rise On-State
Current
I
TM
= 2A ; I
g
= 10mA
50
A/
I
H
Holding Current
V
AK
= 12 V, Gate Open
Initiating Curent = 50mA
T
C
= 25 C
T
C
= - 40 C

2
5.0
10
mA
R
th(j-c)
Thermal Impedance
Junction to case
15
C/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
125
C/W
MCK100-8
2/5
Notes :
1. Pulse Width
1.0 ms , Duty cycle
1%
2. Does not include R
GK
in measurement.
-50
0
50
100
150
0.1
1
10
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature[
o
C]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
20
40
60
80
100
120
140
160
= 180
o
Ma
x
.
Al
l
o
w
abl
e C
a
se
T
e
m
per
at
ur
e [
o
C]
Average On-State Current [A]
10
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
I
GM
(1A)
V
GD
(0.2V)
P
G(AV)
(0.1W)
P
GM
(2W)
V
GM
(5V)
25
o
C
G
a
te
V
o
l
t
ag
e [
V
]
Gate Current [mA]
0.5
1.0
1.5
2.0
2.5
3.0
0.1
1
10
125
o
C
25
o
C
O
n
-S
ta
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
10
-2
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
R
(J-C)
T
r
an
sie
n
t
T
h
e
r
m
a
l I
m
pe
da
nc
e
[
o
C/W
]
Time (sec)
MCK100-8
Fig 2. Maximum Case Temperature
: Conduction Angl e
360
2
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 1. Gate Characteristics
3/5
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(25
o
C)
Junction Temperature[
o
C]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
M
a
x
.
Av
er
age
Pow
e
r
D
i
s
s
i
p
a
t
i
o
n [
W
]
Average On-State Current [A]
-50
0
50
100
150
0.1
1
10
I
H
(t
o
C)
I
H
(2
5
o
C)
Junction Temperature[
o
C]
MCK100-8
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
4/5
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.40
1.60
0.055
0.063
B
0.36
0.56
0.014
0.022
B1
0.32
0.52
0.013
0.020
C
0.35
0.44
0.014
0.017
C1
0.35
0.44
0.014
0.017
D
4.40
4.60
0.173
0.181
D1
1.40
1.80
0.055
0.071
E
2.30
2.60
0.091
0.102
e
1.50
0.060
e1
2.90
3.10
0.114
0.122
H
3.94
4.25
0.155
0.167
L
0.90
1.10
0.035
0.043
R
0.25
0.010
MCK100-8
5/5
SOT- 89 Package Dimension
1. Cathode
2. Anode
3. Gate
1
2
3
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