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Datasheet: BT236-D (SemiWell Semiconductor)

Sensitive Gate Triacs

 

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SemiWell Semiconductor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz, Gate open
600
V
I
T(RMS)
R.M.S On-State Current
T
C
=101 C, Full Sine wave
6.0
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
60/66
A
I
2
t
I
2
t
for Fusing
tp = 10ms
18
A
2
s
P
GM
Peak Gate Power Dissipation
T
C
= 101 C, Pulse width
1.0
us
3.0
W
P
G(AV)
Average Gate Power Dissipation
Over any 20ms period
0.3
W
I
GM
Peak Gate Current
tp = 20us, T
J
=125C
2.0
A
V
GM
Peak Gate Voltage
tp = 20us, T
J
=125C
10
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Mar, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 6 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Non-isolated Type
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
2.T2
3.Gate
1.T1
Symbol
TO-220
1/5
Sensitive Gate Triacs
BT236-D
SemiWell
Semiconductor
1
3
2
Preliminary
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
1.0
mA
V
TM
Peak On-State Voltage
I
T
= 8 A, Inst. Measurement
1.6
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
5
mA
I
-
GT1
5
I
-
GT3
5
I
+
GT3
8
12
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.4
V
V
-
GT1
1.4
V
-
GT3
1.4
V
+
GT3
1.6
2.0
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -0.5 A/ms,
V
D
=2/3 V
DRM
5
V/
I
H
Holding Current
10
mA
R
th(j-c)
Thermal Impedance
Junction to case
2.8
C/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
60
C/W
BT236-D
2/5
Notes :
1. Pulse Width
300us , Duty cycle
2%
10
0
10
1
10
2
0
10
20
30
40
50
60
70
80
60Hz
50Hz
Surg
e O
n
-
S
t
a
t
e
Cur
ren
t
[
A
]
Time (cycles)
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Pow
e
r
D
i
s
s
i
pat
io
n [
W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0
10
1
10
2
T
J
= 25
o
C
T
J
= 125
o
C
On-State
C
u
r
r
e
n
t
[
A
]
On-State Voltage [V]
10
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
V
GD
(0.2V)
25
I
+
GT3
I
GM
(2
A
)
25
I
+
GT1
I
-
GT1
I
-
GT3
P
G(AV)
(0.3W)
P
GM
(3W)
V
GM
(10V)
Ga
t
e
V
o
l
t
age

[V
]
Gate Current [mA]
-50
0
50
100
150
10
1
10
2
10
3
V
+
GT3
X 10
0 (
%
)
V
GT
(t
o
C)
V
+
GT1
V
-
GT1
V
-
GT3
V
GT
(25
o
C)
Junction Temperature [
o
C]
0
1
2
3
4
5
6
7
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Al
low
a
ble Cas
e
T
e
m
per
at
ur
e [
o
C]
RMS On-State Current [A]
BT236-D
3/5
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
-50
0
50
100
150
10
1
10
2
10
3
I
+
GT3
I
+
GT1
I
-
GT1
I
-
GT3
X
100
(%)
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature [
o
C]
10
-2
10
-1
10
0
10
1
10
2
1
10
T
r
ansient T
herm
a
l Im
pedance
[
o
C/
W
]
Time (sec)
4/5
BT236-D
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
A
V
10
6V
R
G
Test Procedure
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.7
10.1
0.382
0.398
B
6.3
6.7
0.248
0.264
C
9.0
9.47
0.354
0.373
D
12.8
13.3
0.504
0.524
E
1.2
1.4
0.047
0.055
F
1.7
0.067
G
2.5
0.098
H
3.0
3.4
0.118
0.134
I
1.25
1.4
0.049
0.055
J
2.4
2.7
0.094
0.106
K
5.0
5.15
0.197
0.203
L
2.2
2.6
0.087
0.102
M
1.25
1.55
0.049
0.061
N
0.45
0.6
0.018
0.024
O
0.6
1.0
0.024
0.039
3.6
0.142
BT236-D
TO-220 Package Dimension
5/5
1. T1
2. T2
3. Gate
A
B
C
I
G
L
1
M
E
F
H
K
N
O
2
3
J
D
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