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Datasheet: BT139F-600 (SemiWell Semiconductor)

Bi-directional Triode Thyristor

 

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SemiWell Semiconductor
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 100C
16
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
145/155
A
I
2
t
I
2
t
for fusing
t =10ms
105
A
2
s
P
GM
Peak Gate Power Dissipation
5.0
W
P
G(AV)
Average Gate Power Dissipation
Over any 20ms period
0.5
W
I
GM
Peak Gate Current
2.0
A
V
GM
Peak Gate Voltage
10
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Mass
2.0
g
Jan, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 16 A )
High Commutation dv/dt
Isolation Voltage ( V
ISO
= 1500V AC )
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
2.T2
3.Gate
1.T1
Symbol
1/5
BT139-600
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-220
1
2
3
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
2.0
mA
V
TM
Peak On-State Voltage
I
T
= 20 A, Inst. Measurement
1.6
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
25
mA
I
-
GT1
25
I
-
GT3
25
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -6.0 A/ms,
V
D
=2/3 V
DRM
10
V/
I
H
Holding Current
20
mA
R
th(j-c)
Thermal Impedance
Junction to case
1.2
C/W
BT139-600
2/5
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(25
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
0
50
100
150
200
60Hz
50Hz
Surg
e O
n
-
S
t
a
t
e
Cur
ren
t
[
A
]
Time (cycles)
0
4
8
12
16
20
95
100
105
110
115
120
125
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Al
l
o
w
a
b
l
e
C
a
s
e
Temp
er
at
ur
e
[
o
C]
RMS On-State Current [A]
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Pow
e
r
Dis
s
ipat
ion [
W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0
10
1
10
2
T
J
= 125
o
C
T
J
= 25
o
C
On-State
C
u
r
r
e
n
t
[
A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
I
GM
(2
A
)
25
P
G(AV)
(0.5W)
P
GM
(5W)
V
GM
(10V)
Gate V
o
l
t
a
g
e

[V
]
Gate Current [mA]
3/5
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
BT139-600
-50
0
50
100
150
0.1
1
10
I
_
GT3
I
+
GT1
I
_
GT1
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature [
o
C]
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1

T
r
ansi
e
nt T
h
ermal
Impe
da
nce
[
o
C/
W
]
Time (sec)
4/5
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
BT139-600
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.7
10.1
0.382
0.398
B
6.3
6.7
0.248
0.264
C
9.0
9.47
0.354
0.373
D
12.8
13.3
0.504
0.524
E
1.2
1.4
0.047
0.055
F
1.7
0.067
G
2.5
0.098
H
3.0
3.4
0.118
0.134
I
1.25
1.4
0.049
0.055
J
2.4
2.7
0.094
0.106
K
5.0
5.15
0.197
0.203
L
2.2
2.6
0.087
0.102
M
1.25
1.55
0.049
0.061
N
0.45
0.6
0.018
0.024
O
0.6
1.0
0.024
0.039
3.6
0.142
TO-220 Package Dimension
5/5
BT139-600
1. T1
2. T2
3. Gate
A
B
C
I
G
L
1
M
E
F
H
K
N
O
2
3
J
D
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