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Datasheet: BT134-F (SemiWell Semiconductor)

Bi-directional Triode Thyristor

 

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SemiWell Semiconductor
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 104 C
4
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
25/27
A
I
2
t
I
2
t
t = 10ms
3.1
A
2
s
P
GM
Peak Gate Power Dissipation
5
W
P
G(AV)
Average Gate Power Dissipation
Over any 20ms period
0.5
W
I
GM
Peak Gate Current
2
A
V
GM
Peak Gate Voltage
5
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
BT134-F
Nov, 2003. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
High Commutation dv/dt
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay.
2.T2
3.Gate
1.T1
Symbol
1/6
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-126
3
2
1
Preliminary
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
0.5
mA
V
TM
Peak On-State Voltage
I
T
= 5 A, Inst. Measurement
1.7
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
25
mA
I
-
GT1
25
I
-
GT3
25
I
+
GT3
70
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
+
GT3
2.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -0.75 A/ms,
V
D
=2/3 V
DRM
5.0
V/
I
H
Holding Current
5
mA
R
th(j-c)
Thermal Impedance
Junction to case
3.5
C/W
BT134-F
2/6
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
0
5
10
15
20
25
30
35
60Hz
50Hz
S
u
r
g
e
O
n
-S
ta
te
C
u
rr
e
n
t
[
A
]
Time (cycles)
0
1
2
3
4
5
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
A
l
lowable C
a
se Tem
per
ature
[
o
C]
RMS On-State Current [A]
0
1
2
3
4
5
0
1
2
3
4
5
6
7
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
P
o
w
e
r D
i
s
s
ipation
[W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
10
2
125
o
C
25
o
C
On
-
S
t
a
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
25
P
G(AV)
= 0.5W
P
GK
= 5W
I
GM
=2
A
V
GK
= 5V
V
GD
= 0.2V
Gate Volta
g
e [V]
Gate Current [mA]
BT134-F
3/6
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
4/6
BT134-F
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
-50
0
50
100
150
0.1
1
10
I
+
GT3
I
+
GT1
I
-
GT1
I
-
GT3
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1

T
r
ans
i
e
nt T
her
m
a
l
I
m
peda
nce [
o
C/
W
]
Time (sec)
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
A
V
10
6V
R
G
Test Procedure
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
0.047
0.059
H
2.3
0.091
I
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
3.2
0.126
5/6
BT134-F
TO-126 Package Dimension
1. Gate
2. T2
3. T1
A
B
C
D
E
F
G
3
2
1
H
I
J
K
L
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