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Datasheet: BT134-D (SemiWell Semiconductor)

Bi-directional Triode Thyristor

 

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SemiWell Semiconductor
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 104 C, Full Sine wave
4
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
25/27
A
I
2
t
I
2
t
for Fusing
t = 10ms
3.1
A
2
s
P
GM
Peak Gate Power Dissipation
5
W
P
G(AV)
Average Gate Power Dissipation
Over any 20ms period
0.5
W
I
GM
Peak Gate Current
2
A
V
GM
Peak Gate Voltage
5
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
BT134-D
Mar, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
2.T2
3.Gate
1.T1
Symbol
1/6
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-126
3
2
1
Preliminary
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
0.5
mA
V
TM
Peak On-State Voltage
I
T
= 5 A, Inst. Measurement
1.7
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
5
mA
I
-
GT1
5
I
-
GT3
5
I
+
GT3
12
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
+
GT3
2.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -0.75 A/ms,
V
D
=2/3 V
DRM
5.0
V/
I
H
Holding Current
1.2
mA
R
th(j-c)
Thermal Impedance
Junction to case
3.5
C/W
BT134-D
2/6
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
0
5
10
15
20
25
30
35
60Hz
50Hz
S
u
r
g
e
O
n
-S
ta
te
C
u
rr
e
n
t
[
A
]
Time (cycles)
0
1
2
3
4
5
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
A
l
lowable C
a
se Tem
per
ature
[
o
C]
RMS On-State Current [A]
0
1
2
3
4
5
0
1
2
3
4
5
6
7
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
P
o
w
e
r D
i
s
s
ipation
[W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
10
2
125
o
C
25
o
C
On
-
S
t
a
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
25
P
G(AV)
= 0.5W
P
GK
= 5W
I
GM
=2
A
V
GK
= 5V
V
GD
= 0.2V
Gate Volta
g
e [V]
Gate Current [mA]
BT134-D
3/6
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
4/6
BT134-D
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
-50
0
50
100
150
0.1
1
10
I
+
GT3
I
+
GT1
I
-
GT1
I
-
GT3
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1

T
r
ans
i
e
nt T
her
m
a
l
I
m
peda
nce [
o
C/
W
]
Time (sec)
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
A
V
10
6V
R
G
Test Procedure
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
0.047
0.059
H
2.3
0.091
I
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
3.2
0.126
5/6
BT134-D
TO-126 Package Dimension
1. Gate
2. T2
3. T1
A
B
C
D
E
F
G
3
2
1
H
I
J
K
L
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