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Datasheet: D2294UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D2294UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
50W
40V
±20V
12A
­65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
15W ­ 12.5V ­ 500MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 11 dB MINIMUM
SOT 171
PIN 1
SOURCE
PIN 3
GATE
PIN 5
SOURCE
PIN 2
SOURCE
PIN 4
DRAIN
PIN 6
SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D2294UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
40
1
6
1
7
1.08
11
50
20:1
72
60
6
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.6A
P
O
= 15W
V
DS
= 12.5V
I
DQ
= 0.6A
f = 500MHz
V
DS
= 0
V
GS
= ­5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max.3.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
D2294UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
3LQ:
3RXW
:



*DLQ
G%
3RXW
*DLQ
I
0+]
,GT
$
9GV 9
Figure 1
Output power and Gain vs. Input Power
3LQ:
3RXW
:
'UDLQ(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
I
0+]
,GT
$
9GV 9
Figure 2
Output power and Efficiency vs. Input Power
3RXW:
*DLQ
G%
I 0+]9GV 9
,'4 $
,'4 $
,'4 $
,'4 $
Figure 3
Gain vs Output Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
500
ZL
W
W
W
W
1.7 + j5.7
ZS
W
W
W
W
3.3+j1.1
70
0.73
-137
14.61
92
0.02
2
0.67
-154
100
0.74
-146
10.8
83
0.02
-3
0.69
-159
150
0.76
-154
6.86
69
0.019
-13
0.73
-163
200
0.78
-159
4.8
60
0.017
-18
0.76
-165
250
0.8
-162
3.6
52
0.015
-22
0.79
-167
300
0.82
-165
3
47
0.014
-22
0.82
-168
350
0.84
-167
2.27
38
0.012
-23
0.84
-171
400
0.86
-169
1.92
34
0.01
-23
0.86
-172
450
0.88
-171
1.52
27
0.008
-20
0.88
-174
500
0.89
-173
1.31
24
0.006
-8
0.89
-175
550
0.9
-174
1.09
19
0.006
7
0.91
-177
600
0.92
-175
0.94
12
0.006
17
0.92
-178
650
0.93
-176
0.74
12
0.006
33
0.93
-180
700
0.94
-178
0.65
7
0.007
39
0.94
179
750
0.94
-180
0.53
8
0.007
49
0.94
178
800
0.95
180
0.43
8
0.008
54
0.95
177
850
0.95
180
0.39
14
0.009
65
0.95
176
900
0.96
178
0.37
15
0.011
69
0.96
175
950
0.95
177
0.35
19
0.013
72
0.95
174
1000
0.95
177
0.34
17
0.014
71
0.96
173
D2294UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
! Vds=12.5V, Idq=0.6A
# MHZ S MA R 50
Typical S Parameters
Freq
S11
S21
S12
S22
MHz
mag
ang
mag
ang
mag
ang
mag ang
D2294UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
3 0 p F
3 . 3 K
3 . 3 K
1 5 p F
2 - 1 8 p F
2 - 1 8 p F
1 - 3 . 5 p F
L 2
L 1
1 0 0 0 p F
0 . 1 u F
1 0 0 u F
2 2
3 0 p F
D 2 2 9 4 U K
0 . 1 u F
1 0 0 0 p F
T 2
T 1
T 3
T 5
T 4
G a t e - B i a s
+ 1 2 . 5 V
Substrate 1.6mm FR4
All microstrip lines W = 2.75mm
T1
47mm
T2
9mm
T3
9mm
T4
13mm
T5
32mm
L1
7 turns 24swg enamelled copper wire, 2mm i.d.
L2
1.5 turns 24swg enamelled copper wire on ferrite core
500MHz Test Fixture
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