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Datasheet: D2254 (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D2254UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
29W
40V
±20V
4A
­65 to 150°C
200°C
MECHANICAL DATA
A
F
E
B
D
C
G
H
I
P
M
N
O
J
K
L
1
2
3
4
5
6
7
8
Q
R
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W ­ 12.5V ­ 1GHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from 1MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
PIN 1 Source (Common)
PIN 2 Drain 1
PIN 3 Drain 2
PIN 4 Source (Common)
PIN 5 Source (Common)
PIN 6 Gate 2
PIN 7 Gate 1
PIN 8 Source (Common)
DBC4 Package
DIM
mm
Tol.
Inches
Tol.
A
6.47
0.08
.255
.003
B
0.76
0.08
.030
.003
C
45°
45
°
D
0.76
0.08
.030
.003
E
1.14
0.08
.045
.003
F
2.67
0.08
.105
.003
G
11.73
0.13
.462
.005
H
8.43
0.08
.332
.003
I
7.92
0.08
.312
.003
J
0.20
0.02
.008
.001
K
0.64
0.02
.025
.001
L
0.30
0.02
.012
.001
M
3.25
0.08
.128
.003
N
2.11
0.08
.083
.003
O
6.35SQ
0.08
.250SQ
.003
P
1.65
0.51
.065
.020
Q
0.13
max
.005
max
R
0.25
0.07
0.010
.003
D2254UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
40
2
2
1
7
0.36
10
40
20:1
24
20
2
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.4A
P
O
= 10W
V
DS
= 12.5V
I
DQ
= 0.4A
f = 1GHz
V
DS
= 0
V
GS
= ­5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
THj­case
Thermal Resistance Junction ­ Case
Max. 6.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
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