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Datasheet: D2089UK (SemeLAB)

METAL GATE RF SILICON FET

 

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SemeLAB
D2089UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
DIM
Millimetres
Tol.
Inches
Tol.
A
25.40
0.25
1.00
0.010
B
45°
45°
C
0.76
0.05
0.030
0.002
D
5.21 DIA
0.13
0.205
0.005
E
1.02
0.13
0.040
0.005
F
0.13
0.02
0.005
0.001
G
3.18
0.13
0.125
0.005
H
3.18
REF
0.125
REF
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
4W
65V
±20V
1A
­65 to 150°C
200°C
MECHANICAL DATA
B
A
C
(2 pls)
D
G
(2 pls)
H
E
F
4
3
2
1
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
1W ­ 28V ­ 2GHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN
PIN 1
SOURCE
PIN 2
GATE
PIN 3
SOURCE
PIN 4
DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
METAL GATE RF SILICON FET
TetraFET
D2089UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
|
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.2A
V
DS
= 28V
I
DQ
= 75mA
f = 30MHz
P
in
= 5mW
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
mA
µ
A
V
mhos
mW
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance*
P
out
Power Output
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
65
1
1
1
7
0.18
750
12
6
0.5
R
THj­case
Thermal Resistance Junction ­ Case
Max. 30°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
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