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Datasheet: D2081UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
D2081UK
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
2W
65V
±20V
200mA
­65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm.
6 .7
6 .3
3 .1
2 .9
3 .7
3 .3
7 .3
6 .7
4 .6 0
2 .3 0
1 .0 5
0 .8 5
0 .8 0
0 .6 0
1
2
3
4
1 3 °
0 .1 0
0 .0 2
0 .3 2
0 .2 4
1 6 °
m ax.
1 .7 0
m ax.
1 0 °
m ax.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW ­ 12V ­ 1GHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE (Typical < 2dB NF)
· HIGH GAIN ­ 11dB MINIMUM
· SURFACE MOUNT
SOT­223
PIN 1
GATE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
METAL GATE RF SILICON FET
TetraFET
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
D2081UK
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
65
1
1
1
7
0.18
11
40
10:1
12
6
0.5
V
GS
= 0
|
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.2A
P
O
= 750mW
V
DS
= 12V
I
DQ
= 75mA
f = 1GHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
mA
µ
A
V
mhos
dB
%
--
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
THj­case
Thermal Resistance Junction ­ Case
Max. 70°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
S Parameters at V
d
= 12V, I
d
= 75mA
Freq
S11
S12
S21
S22
MHz
mag ang mag
ang mag ang
mag
ang
300
0.47
-95
0.04
50
5.20
90
0.32
-90
400
0.46
-120
0.05
80
4.40
76
0.35
-91
500
0.47
-131
0.07
100
3.50
68
0.38
-94
600
0.49
-146
0.10
110
3.00
59
0.43
-98
700
0.51
-156
0.15
110
2.60
51
0.48
-103
800
0.53
-163
0.20
104
2.30
45
0.54
-108
900
0.54
-180
0.25
100
2.10
40
0.58
-112
1000
0.55
178
0.29
96
1.80
36
0.60
-116
1100
0.56
175
0.34
91
1.60
33
0.63
-120
1200
0.57
163
0.40
85
1.40
28
0.65
-126
1300
0.58
150
0.45
80
1.30
26
0.66
-129
1400
0.60
144
0.48
75
1.20
24
0.66
-133
1500
0.60
140
0.52
70
1.10
22
0.66
-135
1600
0.59
130
0.55
66
1.00
21
0.65
-138
1700
0.58
123
0.58
63
0.95
20
0.65
-140
1800
0.56
115
0.60
58
0.90
19
0.64
-142
1900
0.54
110
0.62
54
0.90
20
0.64
-144
2000
0.51
108
0.62
50
0.90
20
0.63
-145
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
D2081UK
1000
100
200
30 0
400
500
600
700
80 0
900
0
1 00
10
20
3 0
40
50
6 0
7 0
80
90
0
P ow er Input (m W )
Po
w
e
r

O
u
t
pu
t
(m
W
)
BIAS
C1
C2
T1
T2
C5
T3
L2
C7
C4
L1
R1
C3
C6
+12V
TYPICAL PERFORMANCE BFM21 at 1GHz
Bias Conditions V
d
= 12V, I
dq
= 75mA
C1, C7
33pF ATC100B
C2, C5, C6
1­8pF
C3, C4
1000pF NPO
L1
0.1
µ
H
L2
10mm of 1.6mm tcw (half turn)
T1
50
microstrip, 11mm long
T2
50
microstrip, 15mm long
T3
50
microstrip, 5mm long
BFM21UK 1GHz Test Circuit
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