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Datasheet: D2030UK (SemeLAB)

METAL GATE RF SILICON FET

 

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SemeLAB
D2029UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 2/99
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
17.5W
65V
±20V
1A
­65 to 150°C
200°C
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W ­ 28V ­ 1GHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
MECHANICAL DATA
Dimensions in mm.
1
2
3
4
3.00
2 PL.
2.07
2 PL.
2 PL.
0.47
0.47
2 PL.
0.10
TYP.
0.381
1.65
2 PL.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
1.27
1.27
0.10 R.
TYP.
0.10
TYP.
6.50 ±
0.15
0.3 R.
4 PL.
1.27
0.80
4 PL.
8
7
6
5
4.90 ± 0.15
0.508
0.360
± 0.005
2.313
± 0.2
F-0127 PACKAGE
PIN 1 ­ SOURCE
PIN 2 ­ DRAIN
PIN 3 ­ DRAIN
PIN 4 ­ SOURCE
PIN 5 ­ SOURCE
PIN 6 ­ GATE
PIN 7 ­ GATE
PIN 8 ­ SOURCE
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
D2029UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 2/99
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.2A
P
O
= 2.5W
V
DS
= 28V
I
DQ
= 0.1A
f = 1GHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
65
1
1
1
5
0.18
13
40
20:1
12
6
0.5
R
THj­case
Thermal Resistance Junction ­ Case
Max. 10°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
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