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Datasheet: D2021 (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D2021UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
17.5W
65V
±20V
3A
­65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
F
G
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
7.5W ­ 28V ­ 1GHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
SO8 PACKAGE
PIN 1 ­ SOURCE
PIN 2 ­ DRAIN
PIN 3 ­ DRAIN
PIN 4 ­ SOURCE
PIN 5 ­ SOURCE
PIN 6 ­ GATE
PIN 7 ­ GATE
PIN 8 ­ SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
Tol.
Inches
Tol.
4.06
±0.08
0.160
±0.003
5.08
±0.08
0.200
±0.003
1.27
±0.08
0.050
±0.003
0.51
±0.08
0.020
±0.003
3.56
±0.08
0.140
±0.003
4.06
±0.08
0.160
±0.003
1.65
±0.08
0.065
±0.003
+0.25
+0.010
0.76
0.030
-0.00
-0.000
0.51
Min.
0.020
Min.
1.02
Max.
0.040
Max.
45°
Max.
45°
Max.
Min.
Min.
Max.
Max.
0.20
±0.08
0.008
±0.003
2.18
Max.
0.086
Max.
4.57
±0.08
0.180
±0.003
METAL GATE RF SILICON FET
TetraFET
D2021UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.6A
P
O
= 7.5W
V
DS
= 28V
I
DQ
=0.3A
f = 1GHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
65
3
1
0.5
7
0.54
13
40
20:1
36
18
1.5
R
THj­case
Thermal Resistance Junction ­ Case
Max. 5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
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