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Datasheet: D2012UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D2012UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
42W
65V
±20V
4A
­65 to 150°C
200°C
MECHANICAL DATA
G
K
M
J
I
E
D
(2 pls)
C
N
(typ)
A
B
F
(2 pls)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W ­ 28V ­ 1GHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from 50 MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
16.51
0.25
0.650
0.010
B
6.35
0.13
0.250
0.005
C
45°
45°
D
3.30
0.13
0.130
0.005
E
18.92
0.08
0.745
0.003
F
1.52
0.13
0.060
0.005
G
2.16
0.13
0.085
0.005
H
14.22
0.08
0.560
0.003
I
1.52
0.13
0.060
0.005
J
6.35
0.13
0.250
0.005
K
0.13
0.03
0.005
0.001
M
5.08
0.51
0.200
0.020
N
1.27 x 45°
0.13
0.050 x 45° 0.005
D2012UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.8A
P
O
= 10W
V
DS
= 28V
I
DQ
= 0.4A
f = 1GHz
V
DS
= 0
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
65
0.8
1
1
7
0.72
10
40
20:1
48
24
2
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 4.2°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
D2012UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
3LQ:
3RXW
:
*DLQ
G%
3RXW
JDLQ
I 0+]
,GT $
9GV 9
3LQ:
3RXW
:
(IILFLHQF\
3RXW
(IILFLHQF\
I 0+]
,GT $
9GV 9
3RXW:3(3
,0'
G%F
,0'
I 0+]
I 0+]
9GV 9
,GT $
Figure 1
Output Power and Gain vs. Input Power
Figure 2
Output Power and Efficiency vs. Input Power
Figure 3
Output Power and Efficiency vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
1000
5.0 - j7.2
2.4 - j7.1
!Freq
S11
S21
S12
S22
!MHz
mag
ang
mag
ang
mag
ang
mag
ang
100
0.841
-122
24.547
98
0.01318
13
0.49
-94
200
0.871
-146
11.482
69
0.01
0
0.61
-125
300
0.891
-156
6.683
52
0.00653
10
0.708
-137
400
0.902
-163
4.365
40
0.00596
49
0.767
-146
500
0.923
-170
3.055
27
0.00891
71
0.813
-155
600
0.933
-174
2.113
22
0.01349
79
0.851
-165
700
0.955
-175
1.758
19
0.01862
85
0.881
-166
800
0.955
-177
1.413
12
0.02344
82
0.902
-170
900
0.966
179
1.161
5
0.02851
80
0.902
-177
1000
0.955
177
0.944
3
0.03236
80
0.902
-179
!
Vds=28V, Idq=0.8A
#
MHz S MA R 50
Typical S Parameters
D2012UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
3 . 3 K
1 0 K
1 0 n F
1 n F
8 . 2 p F
1 - 1 0 p F
1 - 1 0 p F
1 0 p F
1 - 1 0 p F
3 0 p F
3 0 p F
1 0 0 u F
D 2 0 1 2 U K
L 1
L 1
6 . 8 n F
1 0
L 2
1 n F
G a t e - B i a s
+ 2 8 V
6 x 3 m m
c o n t a c t p a d
T
1
T
2
T 3
T
4
T
5
6 x 3 m m
c o n t a c t
p a d
1GHz Test Fixture
Substrate 0.8mm PTFE/glass, Er = 2.5
All microstrip lines W = 2.2mm
T1 35mm
T2 15mm
T3 4mm
T4 14mm
T5 32mm
L1 7.5 turns 24swg enamelled copper wire, 3mm i.d.
L2 1.5 turns 24swg enamelled copper wire on ferrite core
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