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Datasheet: D2004UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D2004UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
58W
65V
±20V
2A
­65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(2 pls)
K
2
3
E
1
G (4 pls)
5
4
D
N
M
J
I
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W ­ 28V ­ 1GHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
6.45
0.13
0.254
0.005
B
1.65R
0.13
0.065R
0.005
C
45°
45°
D
16.51
0.76
0.650
0.03
E
6.47
0.13
0.255
0.005
F
18.41
0.13
0.725
0.005
G
1.52
0.13
0.060
0.005
H
4.82
0.25
0.190
0.010
I
24.76
0.13
0.975
0.005
J
1.52
0.13
0.060
0.005
K
0.81R
0.13
0.032R
0.005
M
0.13
0.02
0.005
0.001
N
2.16
0.13
0.085
0.005
* Per Side
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D2004UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
65
0.4
1
1
7
0.36
10
40
20:1
24
12
1
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.4A
P
O
= 10W
V
DS
= 28V
I
DQ
= 0.4A
f = 1GHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 3.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
D2004UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Figure 1
Output Power and Gain vs. Input Power
Figure 2
Output Power and Efficiency vs. Input Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
ZS
ZL
MHz
W
W
W
W
W
W
W
W
1000MHZ
2.4 - j2.5
5 + j1
3LQ:
3RXW
:



*DLQ
G%
3RXW
*DLQ
I
*+]
,GT
$
9GV 9
3LQ:
3RXW
:
'UDLQ(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
I
*+]
,GT
$
9GV 9
N.B.
Impedances measured terminal to terminal.
D2004UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
T 2
T 1 9
L 1
L 3
1 0 0 n F
1 n F
1 K 2
1 K 2
1 K 2
3 6 p F
3 6 p F
1 - 8 p F
1 0 p F
2 . 2 p F
1 - 8 p F
1 0
1 n F
1 0 0 n F
3 6 p F
3 6 p F
8 . 2 p F
3 . 6 p F
1 - 8 p F
L 2
1 0 0 u F
D 2 0 0 4 U K
D 2 0 0 4 U K
T 1
G a t e - B i a s
+ 2 8 V
T 3
T 4
T 5
T 6
T 7
T 8
T 9
T 1 1
T 1 2
T 1 3
T 1 4
T 1 5
T 1 6
T 1 7
T 1 8
T 1 0
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1
23 mm
T2, T19
50mm 50 OHM UT 34 semi-rigid coax
T3, T7
6mm
T4, T8
8mm
T5, T9
15mm
T6, T10
9mm
T11,T15
8mm
T12,T16
7mm
T13,T17
11mm
T14,T18
5mm
L1,L2
6 turns of 24swg enamelled copper wire, 3mm i.d.
L3
1.5 turns of 24swg enamelled copper wire on Siemens B62152-a7x 2 hole core
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