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Datasheet: D2003UK (SemeLAB)

METAL GATE RF SILICON FET

 

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SemeLAB
D2003UK
Prelim.01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
35W
65V
±20V
1A
­65 to 150°C
200°C
MECHANICAL DATA
C
A
O
N
M
K
J
I
H
G
F
E
D
B
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W ­ 28V ­ 1GHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· VERY LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
16.38
0.26
0.645
0.010
B
1.52
0.13
0.060
0.005
C
45°
45°
D
6.35
0.13
0.250
0.005
E
3.30
0.13
0.130
0.005
F
14.22
0.13
0.560
0.005
G
1.27 x 45°
0.13
0.05 x 45°
0.005
H
1.52
0.13
0.060
0.005
I
6.35
0.13
0.250
0.005
J
0.13
0.02
0.005
0.001
K
2.16
0.13
0.085
0.005
M
1.52
0.13
0.060
0.005
N
5.08
MAX
0.200
MAX
O
18.90
0.13
0.744
0.005
DQ
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
* Per Side
D2003UK
Prelim.01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
65
1
1
1
7
0.18
13
40
20:1
12
6
0.5
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 5W
V
DS
= 28V
I
DQ
= 0.2A
f = 1GHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 5.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
rss
D2003UK
Prelim.01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Figure 1 Output Power and Gain vs. Input power
Figure 2 Output Power and Efficiency vs. Input Power
Figure 3 IMD Vs. Output Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
ZS
ZL
MHz
W
W
W
W
W
W
W
W
1000MHZ
1.1 - j2.5
5.1 - j17.1
3LQ:
3RXW
:
*DLQ
G%
3RXW
*DLQ
9GV 9
,GT $
I *+]
3LQ:
3RXW
:
'UDLQ(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
9GV 9
,GT $
I *+]
3RXW:3(3
,0'
G%F
,GT $
,GT $
I 0+]
I 0+]
9GV 9
!Freq
S11
S21
S12
S22
!MHz
mag
ang
mag
ang
mag
ang
mag
ang
70
0.97
-36.4
15.8 156.6
0.017
67.2
0.91
-23.2
100
0.94
-48.0
14.1 146.3
0.021
58.1
0.88
-30.1
150
0.88
-65.3
12.3 129.9
0.027
45.5
0.81
-40.3
200
0.84
-78.5
10.2 114.7
0.029
34.8
0.77
-48.1
250
0.82
-88.4
8.8
106.0
0.029
28.1
0.75
-54.2
300
0.79
-97.1
7.7
98.3
0.029
27.3
0.73
-59.1
350
0.78 -105.5
6.9
88.5
0.028
22.2
0.72
-64.3
400
0.77 -113.3
6.0
84.5
0.026
24.2
0.71
-69.3
450
0.77 -121.8
5.4
77.8
0.024
23.3
0.70
-75.2
500
0.77 -128.9
4.9
75.3
0.022
29.6
0.70
-80.4
550
0.78 -136.7
4.6
68.3
0.020
35.0
0.70
-86.5
600
0.78 -144.0
4.4
65.4
0.020
46.6
0.70
-93.6
650
0.78 -150.8
4.0
57.2
0.020
57.6
0.70
-99.6
700
0.79 -156.7
3.7
52.3
0.022
68.5
0.71 -105.8
750
0.79 -160.9
3.4
46.7
0.025
76.6
0.70 -111.3
800
0.78 -164.2
3.0
41.4
0.028
81.6
0.69 -115.6
850
0.78 -166.3
2.7
39.5
0.032
87.8
0.68 -117.0
900
0.79 -168.5
2.6
38.4
0.036
92.3
0.68 -119.3
950
0.78 -170.3
2.5
36.8
0.044
97.4
0.70 -121.0
1000
0.79 -172.5
2.4
33.0
0.053
97.4
0.70 -124.2
! Vds=28V, Idq=0.1A
# MHZ S MA R 50
Typical S Parameters
D2003UK
Prelim.01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
T 2
1 0 0 n F
1 n F
1 K 2
D 2 0 0 3 U K
L 3
1 0
1 0 0 u F
1 - 1 0 p F
3 0 p F
3 0 p F
3 . 6 p F
9 . 1 p F
D 2 0 0 3 U K
3 . 6 p F
1 - 1 0 p F
6 . 8 K
1 0 n F
3 0 p F
3 0 p F
T 1 7
1 - 1 0 p F
1 K 2
1 K 2
L 2
L 1
T 1
T 3
T 4
T 6
T 7
T 8
T 9
T 1 0
G a t e - B i a s
T 5
+ 2 8 V
T 1 1
T 1 3
T 1 6
T 1 2
T 1 5
T 1 4
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1
15.7
T2, T17
45mm 50 OHM UT 34 semi-rigid coax
T3, T7
7mm
T4, T8
15mm
T5, T9
7.6mm
T6, T10
8mm
T11,T14
8mm
T12,T15
11.2mm
T13,T16
7mm
L1, L2
6 turns 24swg enamelled copper wire, 3mm i.d.
L3
1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X
2 hole core
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