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Datasheet: D1212UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1212UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
290W
40V
±20V
30A
­65 to 150°C
200°C
MECHANICAL DATA
A
M
K
J
I
H
G
(typ)
F
E
D
C
B
(4 pls)
N
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W ­ 12.5V ­ 500MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
DH
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
DIM
mm
Tol.
Inches
Tol.
A
13.97
0.26
0.550
0.010
B
5.72
0.13
0.225
0.005
C
45°
45°
D
9.78
0.13
0.385
0.005
E
1.65R
0.13
0.065R
0.005
F
23.75
0.13
0.935
0.005
G
1.52R
0.13
0.060R
0.005
H
30.48
0.13
1.200
0.005
I
19.17
0.26
0.755
0.010
J
0.13
0.02
0.005
0.001
K
2.54
0.13
0.100
0.005
M
1.52
0.13
0.060
0.005
N
5.08
0.50
0.200
0.020
D1212UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
40
3
1
1
5.5
2.4
10
50
20:1
180
120
12
V
GS
= 0
I
D
= 100mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 3A
P
O
= 100W
V
DS
= 12.5V
I
DQ
= 4A
f = 500MHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
µ
A
V
mhos
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
TOTAL DEVICE
PER SIDE
PER SIDE
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