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Datasheet: D1203UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1203UK
Prelim. 10/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
117W
40V
±20V
15A
­65 to 150°C
200°C
MECHANICAL DATA
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W ­ 12.5V ­ 500MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· USEFUL P
O
AT 1GHz
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
DM
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
24.76
0.13
0.975
0.005
B
18.42
0.13
0.725
0.005
C
45°
45°
D
6.35
0.13
0.25
0.005
E
3.17 Dia
0.13
0.125 Dia
0.005
F
5.71
0.13
0.225
0.005
G
12.7 Dia
0.13
0.500 Dia
0.005
H
6.60
REF
0.260
REF
I
0.13
0.02
0.005
0.001
J
4.32
0.13
0.170
0.005
K
3.17
0.13
0.125
0.005
M
26.16
0.25
1.03
0.010
D1203UK
Prelim. 10/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 3A
P
O
= 30W
V
DS
= 12.5V
I
DQ
= 0.6A
f = 500MHz
V
DS
= 0
V
GS
= ­5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
40
1
3
0.5
7
2.4
10
50
20:1
180
120
12
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 1.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
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