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Datasheet: D1083UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1083UK
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
STG
Storage Temperature
T
J
Maximum Operating Junction Temperature
62.5W
70V
±20V
5A
­65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm (inches)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W ­ 28V ­ 200MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND
APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13dB MINIMUM
· SURFACE MOUNT
TO­263 PACKAGE
PIN 1 ­ GATE
PIN 3 ­ SOURCE
PIN 2 ­ DRAIN
PIN 4 ­ DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
APPLICATIONS
· LOW COST DC to 200 MHz
METAL GATE RF SILICON FET
TetraFET
4
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1083UK
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
1
1
1
7
0.8
13
40
20:1
60
30
2.5
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
V
DS
= 28V
I
DQ
= 0.1A
P
O
= 4W
f = 200MHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
THj­case
Thermal Resistance Junction ­ Case
Max. 2°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
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