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Datasheet: D1053 (SemeLAB)

METAL GATE RF SILICON FET

 

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SemeLAB
ZTX753DCSM
Prelim. 7/00
Issue 3
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
PNP DUAL TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
DUAL SILICON PLANAR PNP
TRANSISTORS
HERMETIC SURFACE MOUNT PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVEL OPTIONS
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
CM
Peak Pulse Current
I
C
Continuous Collector Current
P
TOT
Power Dissipation @ T
amb
= 25C
Derate above 25C
T
j
T
STG
Operating And Storage Temperature Range
R
q
J-A
Junction - Ambient Thermal Resistance
-120V
-100V
-5V
-6A
-2A
1W
8mW/C
55 to 150C
125C/W
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS PER SIDE
(T
C
= 25C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 Collector 1
PAD 2 Base 1
PAD 3 Base 2
PAD 4 Collector 2
PAD 5 Emitter 2
PAD 6 Emitter 1
A
2
1
3
4
5
6
6.22 0.13
(0.245 0.005)
2
.
54
0.
13
(
0
.
10 0.
005)
1.65 0.13
(0.065 0.005)
2.29 0.20
(0.09 0.008)
1.27 0.13
(0.05 0.005)
1.40 0.15
(0.055 0.006)
4.
32
0.
13
(
0
.
170
0.
005)
0
.
64 0.
08
(
0
.
025 0.
003)
0.23
(0.009)
rad.
A =
ZTX753DCSM
Prelim. 7/00
Issue 3
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 100
m
A
I
C
= 10mA
I
E
= -100
m
A
V
CB
= -100V
T = 100C
V
EB
= -4V
I
C
= -500mA
I
B
= -50mA*
I
C
= -1A
I
B
= -100mA*
I
C
= -2A
I
B
= -200mA*
I
C
= -1A
I
B
= -100mA*
I
C
= -1A
V
CE
= -2V*
I
C
= -50mA
V
CE
= -2V*
I
C
= -500mA
V
CE
= 2V*
I
C
= -1A
V
CE
= -2V*
I
C
= -2A
V
CE
= -2V*
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)CEO
Collector Emitter Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
V
BE(on)
Base Emitter Turn-On Voltage
H
FE
DC Current Gain
-120
-100
-5
-0.1
-10
-0.1
-0.2
-0.3
-0.35
-0.5
-0.8
-1.0
-1.0
-1.3
-0.95
-1.2
70
200
100
200
300
55
110
25
55
V
m
A
V
--
f
T
Transition Frequency
C
obo
Output Capacitance
T
on
Switching Times
T
off
Switching Times
I
C
= -100mA
V
CE
= -5V
f = 100MHz
V
CB
= -10V
f = 1.0MHz
I
C
= -500mA V
CC
= 10V
I
B1
=I
B2
=50mA
100
140
30
40
600
MHz
pF
ns
DYNAMIC CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
* Pulse test tp = 300ms ,
d
2%
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