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Datasheet: D1030UK (SemeLAB)

Gold Metallised Multi-purpose Silicon Dmos Rf Fet 400w - 28v - 175mhz Push-pull

 

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SemeLAB
DIM
Millimetres
Tol.
Inches
Tol.
A
19.05
0.50
0.75
0.020
B
10.77
0.13
0.424
0.005
C
45°
45°
D
9.78
0.13
0.385
0.005
E
5.71
0.13
0.225
0.005
F
27.94
0.13
1.100
0.005
G
1.52R
0.13
0.060R
0.005
H
10.16
0.13
0.400
0.005
I
22.22
MAX
0.875
MAX
J
0.13
0.02
0.005
0.001
K
2.72
0.13
0.107
0.005
M
1.70
0.13
0.067
0.005
N
5.08
0.50
0.200
0.020
O
34.03
0.13
1.340
0.005
P
1.61R
0.08
0.064R
0.003
D1030UK
Document Number 5310
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
500W
70V
±20V
40A
­65 to 150°C
200°C
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
400W ­ 28V ­ 175MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
DR
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
D1030UK
Document Number 5310
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
8
1
1
7
6.4
0.1
13
50
20:1
480
240
20
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 8A
I
D
= 10mA
V
DS
= V
GS
P
O
= 400W
V
DS
= 28V
I
DQ
= 2A
f = 175MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
µ
A
V
mhos
V
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.35°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
VSWR
C
iss
C
oss
C
rss
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