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Datasheet: D1029UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1029UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DIM
Millimetres
Tol.
Inches
Tol.
A
19.05
0.50
0.75
0.020
B
10.77
0.13
0.424
0.005
C
45°
45°
D
9.78
0.13
0.385
0.005
E
5.71
0.13
0.225
0.005
F
27.94
0.13
1.100
0.005
G
1.52R
0.13
0.060R
0.005
H
10.16
0.13
0.400
0.005
I
22.22
MAX
0.875
MAX
J
0.13
0.02
0.005
0.001
K
2.72
0.13
0.107
0.005
M
1.70
0.13
0.067
0.005
N
5.08
0.50
0.200
0.020
O
34.03
0.13
1.340
0.005
P
1.57R
0.08
0.062R
0.003
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
438W
70V
±20V
35A
­65 to 150°C
200°C
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
350W ­ 28V ­ 175MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
DR
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
D1029UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
7
7
1
7
5.6
13
65
20:1
420
210
17.5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 7A
P
O
= 350W
V
DS
= 28V
I
DQ
= 2A
f = 175MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.4°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
rss
D1029UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
3LQ:
3RXW
:
*DLQ
G%
3RXW
JDLQ
I 0+]
,GT $
9GV 9
3LQ:
3RXW
:
'UDLQ(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
I 0+]
,GT $
9GV 9
3RXW:3(3
,0'
G%F
9GV 9
,GT $
I 0+]
I 0+]
Figure 1
Output Power and Gain vs. Input Power
Figure 2
Output Power and Efficiency vs. Input Power
Figure 3
IMD3 vs. Output Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
W
W
175
2.1 + j1.9
2.8 + j2.4
225
1.8 - j0.5
2.9 + j0.7
D1029UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
T 3
T 4
T 6
T 5
T 1
1 u
1 u
2 - 1 8 p F
4 7 p F
6 8 0 p F
2 - 1 8 p F
1 2
1 n
L 2
L 1
6 8 0 p F
1 0 k
D 1 0 2 9 U K
D 1 0 2 9 U K
8 2 0 K
1 0 0 n
T 2
1 n
1 0 0 n
1 0 0 k
1 0 0 0 u
G a t e - B i a s
2 8 V
9 0 p F
1 n
175MHz Test Fixture
T1, 2, 3,
7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1
2 hole core
T4,5
14cm Storm Products EXE18 19/30 S1TW coaxial cable
T6
11cm Storm Products EXE18 19/30 S1TW coaxial cable
L1
6 turns 1.2mm dia wire, 5mm internal diameter
L2
1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core
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