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Datasheet: D1027UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1027UK
Prelim. 2/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DIM
Millimetres
Tol.
Inches
Tol.
A
19.05
0.50
0.75
0.020
B
10.77
0.13
0.424
0.005
C
45°
45°
D
9.78
0.13
0.385
0.005
E
5.71
0.13
0.225
0.005
F
27.94
0.13
1.100
0.005
G
1.52R
0.13
0.060R
0.005
H
10.16
0.13
0.400
0.005
I
22.22
MAX
0.875
MAX
J
0.13
0.02
0.005
0.001
K
2.72
0.13
0.107
0.005
M
1.70
0.13
0.067
0.005
N
5.08
0.50
0.200
0.020
O
34.03
0.13
1.340
0.005
P
1.57R
0.08
0.062R
0.003
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
438W
70V
±20V
30A
­65 to 150°C
200°C
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W ­ 28V ­ 175MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
DR
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
D1027UK
Prelim. 2/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
6
1
1
7
4.8
0.1
13
50
20:1
360
180
15
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 6A
I
D
= 10mA
V
DS
= V
GS
P
O
= 150W
V
DS
= 28V
I
DQ
= 2.4A
f = 175MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
mhos
V
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.4°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
h
VSWR
C
iss
C
oss
C
rss
D1027UK
Prelim. 2/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
2
4
6
8
10
12
14
16
18
20
P in W
0
50
100
150
200
250
300
350
400
P out
W
20
30
40
50
60
70
80
90
100
Drain Efficiency
%
Pout
Drain Efficiency
0
2
4
6
8
10
12
14
16
18
20
P in W
0
50
100
150
200
250
300
350
400
P out
W
12
14
16
18
20
12
Gain
dB
Pout
Gain
Figure 1 ­ Power Output and Efficiency
vs. Power Input.
Figure 2 ­ Power Output & Gain
vs. Power Input.
20
40
60
80
100
120
140
160
180
Pout W PEP
-60
-50
-40
-30
-20
IMD
dBc
IMD3 at Idq=1.5A
IMD3 at Idq=2.5A
Figure 3 ­ IMD vs. Output Power.
0
0.5
1
1.5
2
2.5
I dq A
-50
-40
-30
-20
IMD
dBc
15.5
16.5
17.5
18.5
15.5
16.5
17.5
18.5
Gain
dB
IMD3
IMD5
Gain
Figure 4 ­ IMD & Gain vs. I
dq
f = 175MHz
I
dq
= 2A
V
ds
= 28V
f = 175MHz
I
dq
= 2A
V
ds
= 28V
f
1
= 175.0 MHz
f
2
= 175.1 MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
P
out
= 130W PEP
V
ds
= 28V
2nd harmonic = -28dBc
3rd harmonic = -40dBc
output at 350W
D1027UK
Prelim. 2/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
.
2
0
.
5
1
2
5
1
0
1
8
0
0
0
0.
2
0.
5
1
2
5
10
100
110
120
130
140
150
160
170
180
-170
-160
-150
-140
-130
-120
-110
-100
90
-90
-80
-70
-60
-5
0
-4
0
-3
0
-2
0
-1
0
0
10
20
30
40
50
60
70
80
175
225
ZLopt
Impedance measured Drain - Drain
Z Lopt
Matching
Network
f
Z
L
MHz
R
jX
175
4
-0.5
200
4.5
-4
225
3.5
-5
D1027UK
Prelim. 2/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
.
2
0
.
5
1
2
5
1
0
1
8
0
0
Impedance measured Gate - Gate
0
0.
2
0.
5
1
2
5
10
100
110
120
130
140
150
160
170
180
-170
-160
-150
-140
-130
-120
-110
-100
90
-90
-80
-70
-60
-5
0
-4
0
-3
0
-2
0
-1
0
0
10
20
30
40
50
60
70
80
175
200
225
ZSopt
ZS opt
Matching
Network
f
Zs
MHz
R
jX
175
1.6
-1.5
200
1.6
-1.2
225
2.3
-2
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