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Datasheet: D1022UK (SemeLAB)

METAL GATE RF SILICON FET

 

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SemeLAB
D1022UK
Prelim.11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
292W
70V
±20V
15A
­65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W ­ 28V ­ 500MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
F
A
C
B
(2 pls)
K
2
3
E
1
G (4 pls)
5
4
D
N
M
J
I
H
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
DIM
mm
Tol.
Inches
Tol.
A
6.45
0.13
0.254
0.005
B
1.65R
0.13
0.65R
0.005
C
45°
45°
D
16.51
0.76
0.650
0.03
E
6.47
0.13
0.255
0.005
F
18.41
0.13
0.725
0.005
G
1.52
0.13
0.060
0.005
H
4.82
0.190
I
24.76
0.13
0.975
0.005
J
1.52
0.13
0.060
0.005
K
0.81R
0.13
0.032R
0.005
M
0.13
0.02
0.005
0.001
N
2.16
0.13
0.085
0.005
D1022UK
Prelim.11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
3
1
1
7
2.4
0.1
10
50
20:1
180
90
7.5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 3A
I
D
= 10mA
V
DS
= V
GS
P
O
= 100W
V
DS
= 28V
I
DQ
= 1.2A
f = 500MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
mhos
V
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
h
VSWR
C
iss
C
oss
C
rss
D1022UK
Prelim.11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
3LQ:
3RXW
:
(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
9GV 9
,GT $
I 0+]
3LQ:
3RXW
:
*DLQ
G%
3RXW
*DLQ
9GV 9
,GT $
I 0+]
Figure 1
Power Output and Efficiency vs. Input
Figure 2
Power Output and Gain vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
W
W
500
2.0 - j2.2
2.6 - j0.6
N.B. Impedances measured terminal to
terminal
D1022UK
Prelim.11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
T 4
T 5
T 6
L 1
1 5
L 2
6
T 3
T 2
2 2 K
1 0 0 n F
6 2 0 p F
6 2 0 p F
D 1 0 2 2 U K
D 1 0 2 2 U K
4 7 0 u F
1 0 0 n F
1 n F
4 7 p F
6 8 0 p F
0 . 8 - 1 4 p F
1 0 p F
0 . 8 - 1 4 p F
0 . 8 - 1 4 p F
1 0 p F
0 . 8 - 1 4 p F
1 0 0 K
G a t e - B i a s
5 x 5 m m
c o n t a c t
p a d
5 x 5 m m
c o n t a c t
p a d
5 x 5 m m
c o n t a c t
p a d
5 x 5 m m
c o n t a c t
p a d
+ 2 8 V
D1022UK 500MHz TEST FIXTURE
T1, 6
7cm UT85 50 Ohm semi-rigid coax on Siemens B62152A1x1 2 hole ferrite core
T2, 3,4, 5
7.7 cm UT85-15 15 ohm semi-rigid coax
L1
6 turns 19swg enamelled copper wire, 3.5mm internal diameter
L2
8.5 turns 19swg enamelled copper wire on Fair-rite FT82 ferrite core
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