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Datasheet: D1019UK (SemeLAB)

METAL GATE RF SILICON FET

 

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SemeLAB
D1019UK
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
50W
70V
±20V
5A
­65 to 150°C
200°C
MECHANICAL DATA
4
1
3
2
E
F
A
C
D
G
H
B
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W ­ 28V ­ 175MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 16 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
PIN 1
DRAIN
PIN 3
GATE
PIN 2
SOURCE
PIN 4
SOURCE
DIM
mm
Tol.
Inches
Tol.
A
26.16
0.13
1.030
0.015
B
5.72
0.13
0.225
0.005
C
45°
45°
D
7.11
0.13
0.280
0.005
E
0.13
0.02
0.005
0.001
F
1.52
0.13
0.55
0.005
G
0.43
0.20
0.060
0.008
H
7.67
REF
0.120
REF
D1019UK
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 20W
V
DS
= 28V
I
DQ
= 0.1A
f = 175MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
70
1
1
1
7
0.8
16
50
20:1
60
30
2.5
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 3.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
D1019UK
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
5
10
15
20
25
30
35
40
45
P out
W
0
10
20
30
40
50
60
70
80
90
Efficiency
%
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P
in
W
Pout
Drain Efficiency

V
DS
= 28V
Z
DQ
= 0.1A
f = 175MHz
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P
in
W
0
5
10
15
20
25
30
35
40
45
P out
W
10
11
12
13
14
15
16
17
18
19
Gain
dB
Pout
Gain

V
DS
= 28V
Z
DQ
= 0.1A
f = 175MHz
Figure 1 ­ Power Output and Efficiency
vs. Power Input.
Figure 2 ­ Power Output & Gain
vs. Power Input.
0 5 10 15 20 25 30 35 40
P
out
W PEP
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
I
DQ
= 0.1A
I
DQ
= 0.5A

V
DS
= 28V
f
1

= 175.0MHz
f
2

= 175.1MHz
Figure 3 ­ IMD vs. Output Power.
D1019UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
175MHz
5 + j14
12 ­ j14
!Freq
S11
S21
S12
S22
MHz
mag
ang
mag
ang
mag
ang
mag
ang
50
0.780 -116
18
112
0.034
25
0.642
-85
100
0.775 -135
9.312
85
0.030
11
0.577 -103
150
0.795 -149
6.077
68
0.022
14
0.613 -116
200
0.826 -159
4.193
53
0.017
44
0.669 -128
250
0.853 -169
3.216
43
0.023
74
0.715 -139
300
0.878 -179
2.566
35
0.039
89
0.759 -150
350
0.903
171
1.991
23
0.052
86
0.801 -161
400
0.923
161
1.655
18
0.070
84
0.839 -173
450
0.944
151
1.322
9
0.080
80
0.878
177
500
0.963
142
1.121
4
0.098
76
0.914
167
550
0.978
136
0.899
-2
0.108
72
0.945
159
600
0.985
131
0.762
-7
0.119
66
0.966
153
!
V
DS
= 28V, I
DQ
= 0.1A
#
MHZ
S MA R 50
Typical S Parameters
D1019UK
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
10K
10K
L2
L4
15
10nF
10nF
10-30pF
10-30pF
D1019UK
L1
4.7pF
1nF
100nF
10uF
L3
16-100pF
16-100pF
T1
T2
+28V
Gate-Bias
T3
9 x 6 mm
contact pad
9 x 6mm
contact
pad
T4
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
D1019UK 175MHz TEST FIXTURE
T1
10mm
T2
13mm
T3
12mm
T4
4mm
L1
1.5 turns 22swg enamelled copper wire, 6mm i.d.
L2
10 turns 19swg enamelled copper wire, 6mm i.d.
L3
1.5 turns 22swg enamelled copper wire, 6mm i.d.
L4
13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
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