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Datasheet: D1017UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1017UK
Prelim.10/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
220W
70V
±20V
30A
­65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W ­ 28V ­ 175MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
DM
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
DIM
mm
Tol.
Inches
Tol.
A
24.76
0.13
0.975
0.005
B
18.42
0.13
0.725
0.005
C
45°
45°
D
6.35
0.13
0.25
0.005
E
3.17 Dia.
0.13
0.125 Dia.
0.005
F
5.71
0.13
0.225
0.005
G
12.7 Dia.
0.13
0.500 Dia.
0.005
H
6.60
REF
0.260
REF
I
0.13
0.02
0.005
0.001
J
4.32
0.13
0.170
0.005
K
3.17
0.13
0.125
0.005
M
26.16
0.25
1.03
0.010
D1017UK
Prelim.10/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 6A
P
O
= 150W
V
DS
= 28V
I
DQ
= 0.6A
f = 175MHz
V
DS
= 0V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
70
6
1
1
7
4.8
13
50
20:1
360
180
15
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.8°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
D1017UK
Prelim.10/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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Figure 3
IMD Versus Power Output
Figure 1
Power Out & Efficiency vs Power Input
Figure 2
Power Out & Gain vs. Power Input
!Freq
S11
S21
S12
S22
!MHz
mag
ang
mag
ang
mag
ang
mag
ang
50
0.83 -167.4
7.42
93.3
0.009
26.5
0.79
-167
100
0.89 -169.4
3.56
64.1
0.008
44.1
0.82 -163.7
150
0.93 -169.3
2.05
45.2
0.01
75.4
0.87 -164.7
200
0.95 -170.1
1.23
34.2
0.016
88.2
0.91 -166.3
250
0.96 -170.2
0.85
26
0.023
89.1
0.94 -167.7
300
0.97 -169.7
0.62
22.6
0.03
90.1
0.96
-169
350
0.97 -170.4
0.44
15.2
0.035
86.1
0.96 -169.8
400
0.98 -169.3
0.35
17.8
0.043
85.2
0.97 -170.5
450
0.98
-169
0.27
15.9
0.046
84
0.98 -171.7
500
0.99 -168.5
0.23
19.6
0.053
83.1
0.99 -171.4
!
Vds=28V
Idq=0.6A
# MHZ S MA R 50
Typical S Parameters
D1017UK
Prelim.10/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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1HWZRUN
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5
M;
=6RSW
=6RSW
0DWFKLQJ
1HWZRUN
I
0+]
5
M;
=6
D1017UK
Prelim.10/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
L 1
L 4
L 2
L 3
1 6 - 1 0 0 p F
3 3 p F
1 6 - 1 0 0 p F
1 K
1 0 0 K
1 0 0 p F
1 0 0 n F
1 0 0 p F
1 5
3 5 p F
3 3 p F
1 0 - 5 0 p F
3 . 5 - 2 5 p F
1 . 5 K
1 0 p F
1 0 u F
1 K
D 1 0 1 7 K
1 0 n F
1 0 0 n F
T 1
+ 2 8 V
T 1
T 1
T 2
T 3
T 3
T 3
G a t e - B i a s
7 x 7
m m
c o n t a c t
p a d
7 x 7
m m
c o n t a c t
p a d
175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5
All microsptrip lines W = 5mm
T1,T2
7.5mm
T3
6mm
L1
Hairpin loop 18swg 10mm high, 6.5mm gap
L2
Hairpin loop 5mm wide ribbon, 7mm high, 3.5mm gap
L3
9 turns 19swg enamalled copper wire, 6mm i.d.
L4
12 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite core
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