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Datasheet: D1015UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1015UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
350W
70V
±20V
20A
­65 to 150°C
200°C
MECHANICAL DATA
A
M
K
J
I
H
G
(typ)
F
E
D
C
B
(4 pls)
N
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W ­ 28V ­ 400MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· SIMPLE BIAS CIRCUITS
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
DH
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
DIM
mm
Tol.
Inches
Tol.
A
13.97
0.26
0.550
0.010
B
5.72
0.13
0.225
0.005
C
45°
45°
D
9.78
0.13
0.385
0.005
E
1.65R
0.13
0.065R
0.005
F
23.75
0.13
0.935
0.005
G
1.52R
0.13
0.060R
0.005
H
30.48
0.13
1.200
0.005
I
19.17
0.26
0.755
0.010
J
0.13
0.02
0.005
0.001
K
2.54
0.13
0.100
0.005
M
1.52
0.13
0.060
0.005
N
5.08
0.50
0.200
0.020
D1015UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
4
1
1
7
3.2
13
50
20:1
240
120
10
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 4A
P
O
= 125W
V
DS
= 28V
I
DQ
= 1.6A
f = 500MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 0.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
D1015UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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9GV 9
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Figure 1
Power Output and Efficiency vs. Input Power
Figure 2
Power Output and Gain vs. Input Power
Figure 3
Power Output and Gain vs. Input Power
D1015UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
W
W
400
1.7 - j0.1
2.7 - j1
D1015UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
1 0 0 u F
T 4
T 5
T 6
L 1
L 2
2 - 1 8 p F
1 0 0 n F
1 0 0
1 0 n F
T 1
2 - 1 8 p F
2 - 1 8 p F
5 . 6 K
3 K
T 2
T 3
9 1 p F
9 1 p F
3 0 p F
6 8 0 p F
6 8 0 p F
1 0 0 n F
2 - 1 8 p F
3 0 p F
D 1 0 1 5 U K
D 1 0 1 5 U K
+ 2 8 V
G a t e - B i a s
5 x 5 m m
c o n t a c t p a d
5 x 5 m m
c o n t a c t p a d
5 x 5 m m
c o n t a c t p a d
5 x 5 m m
c o n t a c t p a d
D1015UK Test Fixture
T1
12cm 50 ohm UT85 semi-rigid coax on ferrite core
T2, 3 7.5cm 15 ohm UT85-15 semi-rigid coax
T4,5
7cm
15 ohm UT85-15 semi-rigid coax
T6
11cm 50 ohm UT85 semi-rigid coax on ferrite core
L1
6.5 turns 25swg enamelled copper wire on Fair-Rite FT50B-43 core
L2
6.5 turns 25swg enamelled copper wire, internal diameter
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