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Datasheet: D1013UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1013UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage
BV
GSS
Gate ­ Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
50W
70V
±20V
5A
­65 to 150°C
200°C
MECHANICAL DATA
G
K
M
J
I
E
D
(2 pls)
C
N
(typ)
A
B
F
(2 pls)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W ­ 28V ­ 500MHz
SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· USEFUL P
O
AT 1GHz
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
16.51
0.25
0.650
0.010
B
6.35
0.13
0.250
0.005
C
45°
45°
D
3.30
0.13
0.130
0.005
E
18.92
0.08
0.745
0.003
F
1.52
0.13
0.060
0.005
G
2.16
0.13
0.085
0.005
H
14.22
0.08
0.560
0.003
I
1.52
0.13
0.060
0.005
J
6.35
0.13
0.250
0.005
K
0.13
0.03
0.005
0.001
M
5.08
0.51
0.200
0.020
N
1.27 x 45°
0.13
0.050 x 45° 0.005
D1013UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 20W
V
DS
= 28V
I
DQ
= 0.2A
f = 500MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
µ
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
70
1
1
1
7
0.8
13
50
20:1
60
30
2.5
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 3.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µ
s , Duty Cycle
2%
D1013UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Figure 1
Power Output vs. Input Power
Figure 3
Gain vs. Output Power
Figure 4
IMD vs. Output Power
Figure 2
Efficiency vs. Output Power
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D1013UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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D1013UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
D 1 0 1 3 U K
1 - 1 0 p F
2 0 p F
1 - 1 0 p F
1 0 0 K
1 K
1 0 K
1 0 0 n F
1 n F
1 n
1 - 1 0 p F
1 - 1 0 p F
1 0 p F
L 1
L 2
1 0
1 0 0 u F
1 0 0 n F
1 n F
1 n F
3 . 3 K
1 n
T 3
T 2
T 1
G a t e - B i a s
+ 2 8 V
T 4
T 6
T 7
T 5
500MHz Test Fixture
Substrate 0.8 mm FR4, Er = 2.2
All microstrip lines W = 2.2mm
T1
T2
T3
10mm
T4
T5
30mm
T6
6mm
T7
12.5mm
L1
5.5 turns 20swg enamelled copper wire 7mm i.d.
L2
1.5 turns 24swg enamelled copper wire on Siemens B62152A7X 2 hole
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