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Datasheet: D1007UK (SemeLAB)

Metal Gate Rf Silicon Fet

 

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SemeLAB
D1007UK
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain ­ Source Breakdown Voltage *
BV
GSS
Gate ­ Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
100W
70V
±20V
5A
­65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(2 pls)
K
2
3
E
1
G (4 pls)
5
4
D
N
M
J
I
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W ­ 28V ­ 500MHz
PUSH­PULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
· SUITABLE FOR BROAD BAND APPLICATIONS
· LOW C
rss
· USEFUL P
O
at 1 GHz
· LOW NOISE
· HIGH GAIN ­ 13 dB MINIMUM
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
6.45
0.13
0.254
0.005
B
1.65R
0.13
0.065R
0.005
C
45°
45°
D
16.51
0.76
0.650
0.03
E
6.47
0.13
0.255
0.005
F
18.41
0.13
0.725
0.005
G
1.52
0.13
0.060
0.005
H
4.82
0.25
0.190
0.010
I
24.76
0.13
0.975
0.005
J
1.52
0.13
0.060
0.005
K
0.81R
0.13
0.032R
0.005
M
0.13
0.02
0.005
0.001
N
2.16
0.13
0.085
0.005
* Per Side
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D1007UK
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
70
1
1
1
7
0.8
13
50
20:1
60
30
2.5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 40W
V
DS
= 28V
I
DQ
= 0.4A
f = 400MHz
V
DS
= 28V
V
GS
= ­5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain­Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj­case
Thermal Resistance Junction ­ Case
Max. 1.75°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
TOTAL DEVICE
PER SIDE
PER SIDE
D1007UK
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Figure 1
Power Output and efficiency vs. Power Input.
Figure 2
Power Output and Gain vs. Power Input.
Figure 3
IMD Vs. Output Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
ZS
ZL
MHz
W
W
W
W
W
W
W
W
400MHZ
10.7 - j35.4
13.8 - j22.2
0
2
4
6
8
1 0
1 2
P i n W
0
1 0
2 0
3 0
4 0
5 0
6 0
P o u t
W
2 0
3 0
4 0
5 0
6 0
7 0
8 0
D r a i n E f f i c i e n c y
%
P o u t
D r a i n E f f i c i e n c y
f = 4 0 0 M H z
I d q = 0 . 4 A
V d s = 2 8 V
0
2
4
6
8
1 0
1 2
P i n W
0
1 0
2 0
3 0
4 0
5 0
6 0
P o u t
W
6
8
1 0
1 2
1 4
1 6
1 8
G a i n
d B
P o u t
G a i n
f = 4 0 0 M H z
I d q = 0 . 4 A
V d s = 2 8 V
0
1 0
2 0
3 0
4 0
5 0
6 0
P o u t W P E P
- 6 0
- 5 0
- 4 0
- 3 0
- 2 0
- 1 0
0
I M D 3
d B c
I M D 3
f 1 = 4 0 0 M H z
f 2 = 4 0 0 . 1 M H z
I d q = 0 . 4 A
V d s = 2 8 V
!Freq
S11
S21
S12
S22
!MHz
mag
ang
mag
ang
mag
ang
mag
ang
100
0.767
-135
22.646
88
0.0155
9
0.531
-103
200
0.813
-153
10.116
57
0.0099
4
0.692
-131
300
0.841
-161
5.623
39
0.0076
49
0.794
-143
400
0.861
-169
3.548
25
0.013
0
79
0.841
-151
500
0.882
-175
2.82
0
20
0.021
0
78
0.875
-156
600
0.902
180
2.093
14
0.0285
78
0.91
0
-161
700
0.923
174
1.365
9
0.0376
77
0.944
-166
800
0.912
170
1.096
2
0.0457
66
0.944
-170
900
0.923
164
0.902
-3
0.0484
66
0.933
-176
1000
0.923
161
0.724
-4
0.0596
64
0.944
-177
!
V
DS
= 28V, I
DQ
= 1A
#
MHZ
S MA R 50
Typical S Parameters
D1007UK
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
D 1 0 0 7 U K
D 1 0 0 7 U K
I N P U T
B I A S
T 2
T 3
T 1
2 - 1 8 p F
1 0 K
3 0 p F
1 0 K
6 2 0 p F
6 2 0 p F
1 0 0 n F
L 1
L 2
O U T P U T
1 - 3 . 5 p F
6 2 0 p F
6 2 0 p F
3 0 p F
1 0 0 n F 1 0 u F
+ 2 8 V
3 9
2 - 1 8 p F
T 4
T 5
T 6
T 7
T 8
T 9
T 1 0
D1007UK TEST FIXTURE
Substrate 1.6mm FR4
All microstrip lines W = 2.5mm
T1
45mm 50 OHM UT34 semi-rigid coax
T2, T3
55mm 50 OHM UT 34 semi-rigid coax
T4, T5
25mm microstrip line
T6, T7
10mm microstrip line
T8, T9
45mm 25 OHM UT 34-25 semi-rigid coax
T10
60mm 50OHM UT34 semi-rigid coax
L1
4 turns 19swg enamelled copper wire, 7mm i.d.
L2
2.5 turns of 19swg enamelled copper wire on T50-6 ferrite toroid
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