HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: DD200HB160 (SanRex Corporation)

DIODE MODULE

 

Download: PDF   ZIP
SanRex Corporation
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD200HB
DIODE MODULE
Power Diode Module DD200HB series are designed for various rectifier circuits.
DD200HB has two diode chips connected in series and the mounting base is electrically
isolated from elements for simple heatsink construction. Wide voltage rating up to
1,600V is available for various input voltage.
Isolated mountings base
Two elements in a package for simple
single and three phasebridge
connections
Highly reliable glass passivated chips
High Surge current Capability
Applications
Various rectifiers, Bettery charagers, DC motor drives
Maximum Ratings
Tj25 unless otherwise specified
Symbol
Item
Ratings
DD200HB120
1200
1350
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD200HB160
1600
1700
V
V
Symbol
Item
Average Forward Current
Conditions
Ratings
Unit
A
I
F
AV
Single Phase, half wave, 180
conduction, Tc96
200
I
F
RMS
I
FSM
R.M.S. Forward Current
Surge Forward Current
Single Phase, half wave, 180
conduction, Tc96
1
2
cycle, 50/60H
Z
, peak value, non-repetitive
310
5000/5500
A
A
I
2
t
I
2
t
Value for one cycle of surge current
125000
A
2
S
Tj
Operating Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Breakdown Voltage
R.M.S.
Mounting
Torque
A.C. 1 minute
2500
V
Mounting
M5
Terminal
M8
Mass
Recommended Value 1.5-2.5
15-25
Recommended Value 8.8-10
15-25
2.7
28
11
115
N
m
fB
g
Typical Value
510
920.5
12
18
M814
800.3
42max
34max
2
26
60
0.5
48
0.3
24
26
4-6M5
R8.0
52
Unit
Electrical Characteristics
Symbol
I
RRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at V
RRM
. Single phase, half wave, T
j
150
Ratings
50
1.40
0.18
Unit
mA
V
FM
Forward Voltage Drop, max.
Forward current 600A, T
j
25, Inst. measurement
V
Rth
j-c Thermal Impedance, max.
Junctoin to case
Per a half module
/W
UL;E76102
M
DD
SanRex
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD200HB
Maximum Forward Characteristics
Forward Voltage Drop V
F
V
Per one element
Tj25150
Average Forward Current vs.
Power Dissipation
Power Dissipation Pav
W
Three Phase
Per one element
D.C.
Single Phase
Average Forward Current vs.
Allowable Case Temperature
Average Forward Current I
F
A
Allowable Case Temperature Tc
Per one element
Three Phase Single Phase
D.C.
Cycle Surge Forward Current Rating
Non-Repetitive
TimeCycles
Surge Forward Current I
F
A
60Hz
= start
50Hz
Per one element
Transient Thermal Impedance
Time
t
sec
-
-
-
Transient Thermal Impedance
j-c
/
W
Maximum
Junction to Case
Per one element
between fin and ambient
IdAav.
Output Current
BTwo Pluse Bridge
connection
Ambient Temperature
Output CurrentA
Total Power Dissipation
W
Allowable Case Temperature
Rth
f-a
Thermal resistance
B2
Rth:0.5C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
Rth:0.05C/W
Conduction Angle
between fin and ambient
IdAav.
Output Current
BSix pulse Bridge
connection
Ambient Temperature
Output CurrentA
Total Power Dissipation
W
Allowable Case Temperature
B6
B6
Rth
f-a
Thermal resistance
between fin and
ambient
Rth:0.5C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
Rth:0.05C/W
Conduction Angle
© 2018 • ICSheet
Contact form
Main page