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Datasheet: CM15MD1-12H (Powerex Power Semiconductors)

CI Module Three Phase Converter Three Phase Inverter 15 Amperes/600 Volts

 

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Powerex Power Semiconductors
307
Six-IGBT IGBTMODTM
H-Series Module
50 Amperes/600 Volts
CM50TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.00
127.0
B
4.33
0.01
110.0
0.3
C
3.86
98.0
D
2.20
56.0
E
1.57
40.0
F
1.12
28.5
G
1.04
26.5
H
1.01
25.6
J
0.98
25.0
Dimensions
Inches
Millimeters
K
0.85
21.5
L
0.83
21.0
M
0.75
19.0
N
0.71
18.0
P
0.69
17.5
Q
0.65
16.5
R
0.30
7.5
S
0.22 Dia.
Dia. 5.5
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (V
CES
), 50 Ampere Six-
IGBT IGBTMODTM Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
50
12
H
P
G
R
.250 TAB
.110 TAB
R
L
R
L
B
E
J
F
F
K
M
Q
R
D
A
C
N
P
N
u
v
w
B
u
P E
u
P
B
v
P E
v
P
B
w
P E
w
P
B
u
N E
u
N
B
v
N E
v
N
B
w
N E
w
N
S - DIA.
(2 TYP.)
P
* Parentheses indicate module marking
N
(BuP)*
GuP
(BvP)
GvP
(BwP)
GwP
(BuN)
GuN
(BvN)
GvN
(BwN)
GwN
EuP
EuN
u
EvP
v
EvN
EwP
w
EwN
308
CM50TF-12H
Six-IGBT IGBTMODTM H-Series Module
50 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM50TF-12H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
50
Amperes
Peak Collector Current
I
CM
100*
Amperes
Diode Forward Current
I
F
50
Amperes
Diode Forward Surge Current
I
FM
100*
Amperes
Power Dissipation
P
d
250
Watts
Max. Mounting Torque M5 Mounting Screws
17
in-lb
Module Weight (Typical)
390
Grams
V Isolation
V
RMS
2500
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 5mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 50A, V
GE
= 15V
2.1
2.8**
Volts
I
C
= 50A, V
GE
= 15V, T
j
= 150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 50A, V
GS
= 15V
150
nC
Diode Forward Voltage
V
FM
I
E
= 50A, V
GS
= 0V
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
5
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V, f = 1MHz
1.8
nF
Reverse Transfer Capacitance
C
res
1
nF
Resistive
Turn-on Delay Time
t
d(on)
200
ns
Load
Rise Time
t
r
V
CC
= 300V, I
C
= 50A,
300
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 13
200
ns
Times
Fall Time
t
f
300
ns
Diode Reverse Recovery Time
t
rr
I
E
= 50A, di
E
/dt = 100A/
s
110
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 50A, di
E
/dt = 100A/
s
0.14
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.50
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
1.00
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.042
C/W
309
CM50TF-12H
Six-IGBT IGBTMODTM H-Series Module
50 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)

COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
10
9
100
75
50
25
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)

COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
100
75
50
25
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-CURRENT, I
C
, (AMPERES)

COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
25
50
75
100
4
3
2
1
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)

COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 20A
I
C
= 100A
I
C
= 50A
0
0.8
1.6
2.4
3.2
4.0
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)

CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, I
E
, (AMPERES)

REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -100A/
sec
T
j
= 25C
10
1
10
0
10
-1

REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)

GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
50
100
150
200
250
16
12
8
4
0
V
CC
= 200V
V
CC
= 300V
COLLECTOR CURRENT, I
C
, (AMPERES)

SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= 15V
R
G
= 13
T
j
= 125C
t
f
310
CM50TF-12H
Six-IGBT IGBTMODTM H-Series Module
50 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.5
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 1.0
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
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