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Datasheet: CM150TF-12H (Powerex Power Semiconductors)

Six-IGBT IGBTmod 150 Amperes/600 Volts

 

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319
Six-IGBT IGBTMODTM
H-Series Module
150 Amperes/600 Volts
CM150TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.21
107.0
B
4.02
102.0
C
3.543
0.01
90.0
0.25
D
3.15
0.01
80.0
0.25
E
1.57 40.0
F
1.38
35.0
G
1.28
32.5
H
1.26 Max.
32.0 Max
J
1.18
30.0
K
0.98
25.0
L
0.96
24.5
M
0.79
20.0
N
0.67
17.0
Description:
Powerex IGBTMODTM Modules are
designed for use in switching appli-
cations. Each module consists of
six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM150TF-12H
is a 600V (V
CES
), 150 Ampere
Six-IGBT IGBTMODTM Power
Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
150
12
Dimensions
Inches
Millimeters
P
0.57
14.5
Q
0.55
14.0
R
0.47
12.0
S
0.43
11.0
T
0.39
10.0
U
0.33
8.5
V
0.30
7.5
W
0.24 Rad.
Rad. 6.0
X
0.24
6.0
Y
0.22
5.5
Z
M5 Metric
M5
AA
0.08
2.0
J
H
D
B
S
V
U
K
J
T
R
G
F
L
P
C
A
AA
AA
M
M
P
N
BuP
EuP
BuN
EuN
u
BvP
EvP
v
BvN
EvN
BwP
EwP
w
BwN
EwN
P
N
P
P
N
N
U
V
W
B
u
P
B
v
P
B
w
P
B
u
N
B
v
N
B
w
N
E
u
P
E
v
P
E
w
P
E
u
N
E
v
N
E
w
N
X
X
X
.110 TAB
Q
Q
N
Z - M5 THD
(7 TYP.)
Y - DIA.
(4 TYP.)
TYP
W
E
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320
CM150TF-12H
Six-IGBT IGBTMODTM H-Series Module
150 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM150TF-12H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
150
Amperes
Peak Collector Current
I
CM
300*
Amperes
Diode Forward Current
I
F
150
Amperes
Diode Forward Surge Current
I
FM
200*
Amperes
Power Dissipation
P
d
600
Watts
Max. Mounting Torque M5 Terminal Screws
17
in-lb
Max. Mounting Torque M5 Mounting Screws
17
in-lb
Module Weight (Typical)
830
Grams
V Isolation
V
RMS
2500
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 15mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 150A, V
GE
= 15V
2.1
2.8**
Volts
I
C
= 150A, V
GE
= 15V, T
j
= 150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 150A, V
GS
= 15V
450
nC
Diode Forward Voltage
V
FM
I
E
= 150A, V
GE
= 0V
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
15
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V, 1MHz
5.3
nF
Reverse Transfer Capacitance
C
res
3
nF
Resistive
Turn-on Delay Time
t
d(on)
200
ns
Load
Rise Time
t
r
V
CC
= 300V, I
C
= 150A,
550
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 4.2
300
ns
Times
Fall Time
t
f
300
ns
Diode Reverse Recovery Time
t
rr
I
E
= 150A, di
E
/dt = 300A/
s
110
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 150A, di
E
/dt = 300A/
s
0.41
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.21
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.47
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.025
C/W
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321
CM150TF-12H
Six-IGBT IGBTMODTM H-Series Module
150 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)

COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
300
0
2
4
6
8
10
150
50
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
100
200
250
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)

COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
0
4
8
12
16
20
200
150
100
50
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
250
COLLECTOR-CURRENT, I
C
, (AMPERES)

COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
50
100
150
200
300
4
3
2
1
0
250
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)

COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 60A
I
C
= 300A
I
C
= 150A
0
0.8
1.6
2.4
3.2
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)

CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, I
E
, (AMPERES)

REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0

REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -300A/
sec
T
j
= 25C
GATE CHARGE, Q
G
, (nC)

GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
100
200
300
400
500
16
12
8
4
0
V
CC
= 200V
600
V
CC
= 300V
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= 15V
R
G
= 4.2
T
j
= 125C
t
f
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322
CM150TF-12H
Six-IGBT IGBTMODTM H-Series Module
150 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.21
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.47
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3

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