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Datasheet: CM1200HB-66H (Powerex Power Semiconductors)

High Power Switching Use Insulated Type

 

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Powerex Power Semiconductors
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
q
I
C ................................................................
1200A
q
V
CES .......................................................
3300V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1200HB-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
CIRCUIT DIAGRAM
E
C
E
E
C
C
E
G
C
LABEL
C
E
G
C
E
CM
E
E
C
C
29.5
5
13
61.5
61.5
140
124
0.25
40
79.4
20.25
57
0.25
171
190
5.2
40
15
41.25
57
0.25
57
0.25
38
28
20
3 - M4 NUTS
8 -
7MOUNTING HOLES
6 - M8 NUTS
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 1650V, I
C
= 1200A, V
GE
= 15V
V
CC
= 1650V, I
C
= 1200A
V
GE1
= V
GE2
= 15V
R
G
= 1.6
Resistive load switching operation
I
E
= 1200A, V
GE
= 0V
I
E
= 1200A,
die / dt = 2400A /
s
(Note 1)
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
I
C
= 120mA, V
CE
= 10V
I
C
= 1200A, V
GE
= 15V
(Note 4)
V
CE
= 10V
V
GE
= 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C, IGBT part
--
--
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
3300
20
1200
2400
1200
2400
15600
40 ~ +150
40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
MAXIMUM RATINGS
(Tj = 25
C)
Symbol
Item
Conditions
Unit
Ratings
V
V
A
A
A
A
W
C
C
V
Nm
Nm
Nm
kg
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM(Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
Min
Typ
Max
15
0.5
4.94
--
--
--
--
--
1.60
2.00
2.50
1.00
3.64
1.40
--
0.008
0.016
--
mA
A
nF
nF
nF
C
s
s
s
s
V
s
C
K/W
K/W
K/W
--
--
3.80
4.00
180
18.0
5.4
8.6
--
--
--
--
2.80
--
400
--
--
0.006
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC(Note 2)
t
rr
(Note 2)
Q
rr
(Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
6.0
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.5
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
10
1
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE VS. V
CE
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(
A
)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
2400
800
400
0
20
0
4
8
12
1200
16
2000
1600
0
8
6
4
2
2400
0
400
800
1600
1200
2000
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
0
400
800
1200
1600
2000
2400
10
0
2
4
6
8
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
C
V
GE
= 14V
V
GE
= 13V
V
GE
= 12V
V
GE
= 11V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
V
GE
= 15V
V
GE
= 20V
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
T
j
= 25
C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
0
20
16
12
8
4
10
8
6
4
2
0
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
C
I
C
= 2400A
I
C
= 1200A
I
C
= 480A
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
t
rr
7
5
3
2
7 10
2
10
0
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
1
5
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1650V, V
GE
=
15V
R
G
= 1.6
, T
j
= 125
C
Inductive load
t
d(on)
t
r
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
s
)
COLLECTOR CURRENT I
C
(A)
V
CC
= 1650V, T
j
= 125
C
Inductive load
V
GE
=
15V, R
G
= 1.6
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
s
)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
7
5
3
2
10
2
7
5
5
3
2
10
3
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j c)
TIME (s)
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j c)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.008
C/ W
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.016
C/ W
20
16
12
8
4
0
20000
15000
0
5000
10000
V
GE
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(nC)
V
CC
= 1650V
I
C
= 1200A
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