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Datasheet: CM1200HA-34H (Powerex Power Semiconductors)

High Power Switching Use Insulated Type

 

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Powerex Power Semiconductors
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
q
I
C ................................................................
1200A
q
V
CES .......................................................
1700V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1200HA-34H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
C
G
E
C
C
E
E
C
E
C
E
CM
E
C
G
20
114
130
16.5
2.5
18.5
18
61.5
14.5
11
35
5
30
140
5
38
28
31.5
4 - M8 NUTS
3 - M4 NUTS
124
0.25
57
0.25
57
0.25
6 -
7 MOUNTING HOLES
LABEL
CIRCUIT DIAGRAM
Feb. 2000
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 850V, I
C
= 1200A, V
GE
= 15V
V
CC
= 850V, I
C
= 1200A
V
GE1
= V
GE2
= 15V
R
G
= 1.6
Resistive load switching operation
I
E
= 1200A, V
GE
= 0V
I
E
= 1200A
die / dt = 2400A /
s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
C)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C, IGBT part
--
--
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
1700
20
1200
2400
1200
2400
12500
40 ~ +150
40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Symbol
Item
Conditions
Unit
Ratings
V
V
A
A
A
A
W
C
C
V
Nm
Nm
Nm
kg
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
V
V
Min
Typ
Max
24
0.5
3.58
--
--
--
--
--
1.20
1.50
2.00
0.60
3.12
2.00
--
0.010
0.032
--
mA
A
nF
nF
nF
C
s
s
s
s
V
s
C
K/W
K/W
K/W
--
--
2.75
3.30
140
20.0
7.6
6.6
--
--
--
--
2.40
--
200
--
--
0.008
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr
(Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
5.5
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.5
Thermal resistance
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
I
C
= 120mA, V
CE
= 10V
I
C
= 1200A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
1600
2000
2400
800
400
0
10
0
2
4
6
8
1200
1600
2000
2400
800
400
0
1200
20
0
4
8
12
16
0
5
4
3
1
2
0
400
800
1200 1600 2000 2400
0
20
16
12
8
4
10
8
6
4
2
0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(
A
)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T
j
= 25
C
T
j
= 25
C
V
GE
= 13V
V
GE
= 11V
V
GE
= 12V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
I
C
= 2400A
I
C
= 1200A
I
C
= 480A
V
CE
= 10V
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
T
j
= 25
C
T
j
= 125
C
T
j
= 25
C
10
1
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE VS. V
CE
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 850V, V
GE
=
15V
R
G
= 1.6
, T
j
= 125
C
Inductive load
t
d(on)
t
r
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
s
)
COLLECTOR CURRENT I
C
(A)
V
CC
= 850V, T
j
= 125
C
Inductive load
V
GE
=
15V, R
G
= 1.6
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
s
)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
7
5
3
2
10
2
7
5
5
3
2
10
3
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.016
C/ W
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j c)
TIME (s)
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.040
C/ W
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j c)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
20
16
12
8
4
0
8000
10000
6000
0
2000
4000
V
GE
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(nC)
V
CC
= 850V
I
C
= 1200A
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